Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream
View Patent ↗An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, CO 3 O 4 , ZnO, MnO 2 and mixtures thereof.
1. An apparatus for abatement of at least one toxic gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, such apparatus comprising:
a first sorbent bed material having a high surface area and a physical sorbent affinity for trapping the at least one toxic gas component;
a second discrete sorbent bed material having a high capacity sorbent affinity for the at least one toxic gas component;
a third discrete sorbent bed material having a high capture rate sorbent affinity for the at least one toxic gas component; and
a flow path joining the process in gas flow communication with the sorbent bed materials such that the effluent stream contacts the first sorbent bed material then the second and third sorbent bed materials to at least partially remove the at least one toxic gas component from the effluent stream.
2. The apparatus of claim 1 , wherein the second sorbent bed material has a mass transfer zone that is greater than the mass transfer zone of the third sorbent bed material.
3. The apparatus of claim 1 , wherein the first, second and third sorbent bed materials are arranged in respective first, second and third layers.
4. The apparatus of claim 3 , wherein the first, second and third sorbent materials in the respective first, second and third layers each have different physical affinities for a waste gas species.