Through-wafer interconnects for photoimager and memory wafers
View Patent ↗A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.
1. A method for forming an interconnect, comprising forming an electrically conductive interconnect through a wafer, wherein the interconnect extends from a frontside surface of the wafer to a backside surface of the wafer, and wherein forming the electrically conductive interconnect further comprises:
forming a hole through a bond pad in the wafer, the hole extending from the frontside surface of the wafer to the backside surface of the wafer;
coating sidewalls of the hole with a dielectric;
applying a first conductive material to the dielectric;
filling the hole with a second conductive material, the second conductive material extending from the frontside surface to the backside surface and being electrically coupled to the bond pad, wherein the second conductive material is co-planar and/or recessed with respect to the frontside surface and surrounded by a dielectric passivation material at the frontside surface; and
performing a chemical mechanical polish on the passivation material after filling the hole with the second conductive material.
2. The method of claim 1 further comprising:
creating a substantially flat surface on the frontside surface and the backside surface of the wafer after filling the hole with the second conductive material.
3. The method of claim 2 , wherein the act of creating comprises performing a wet etch on at least the backside surface of the wafer.
4. The method of claim 1 , wherein the act of forming the hole comprises:
performing an etch to expose an upper portion of the bond pad and to create the hole through the wafer.
5. The method of claim 1 , wherein the act of coating comprises coating the sidewalls with a low silane oxide.
6. The method of claim 1 , wherein the act of coating comprises depositing the dielectric layer by chemical vapor deposition.
7. The method of claim 1 , wherein the act of applying comprises:
applying a layer of nickel on one of titanium nitride and tungsten.
8. The method of claim 1 , wherein the act of applying comprises:
applying a layer of copper on tantalum.
9. The method of claim 1 , wherein the act of applying comprises:
applying a layer of copper on tungsten.
10. The method of claim 1 , wherein the act of filling comprises filling the hole with solder.
11. The method of claim 1 , wherein the act of filling comprises filling the hole by plating the sidewalls with a conductive material.
12. The method of claim 1 , further comprising forming a plated layer of a conductive material on top of the bond pad and along an outer edge of the hole, the plated layer of the conductive material extending from the frontside surface of the wafer to a top surface of the bond pad.
13. The method of claim 1 further comprising:
forming at least one of a color filter array and a microlens on the wafer.
14. A method for forming an interconnect, comprising forming an electrically conductive interconnect through a wafer, wherein the interconnect extends from a frontside surface of the wafer to a backside surface of the wafer, and wherein forming the electrically conductive interconnect further comprises:
forming a hole through a bond pad in the wafer, the hole extending from the frontside surface of the wafer to the backside surface of the wafer;
coating sidewalls of the hole with a dielectric;
applying a first conductive material to the dielectric;
filling the hole with a second conductive material, the second conductive material extending from the frontside surface to the backside surface and being electrically coupled to the bond pad; and
creating a flat surface on the frontside surface and the backside surface of the wafer, wherein the act of creating comprises performing a chemical mechanical polish on at least the frontside surface of the wafer after filling the hole with the second conductive material.
15. A method for forming an interconnect through a wafer, the method comprising:
forming a blind hole though a bond pad in the wafer, the hole extending only partially through the wafer from a frontside surface of the wafer to a portion of the wafer below a lower surface of the bond pad; and
filling the hole with an electrically conductive material, the electrically conductive material extending from the frontside surface to an opposite end of the hole;
thinning the wafer from a backside surface of the wafer after filling the hole with the electrically conductive material, wherein the wafer is thinned from the backside surface until the hole is in contact with the backside surface; and
insulating the backside surface of the wafer.
16. The method of claim 15 further comprising:
performing a tetramethylammonium hydroxide (TMAH) silicon etch to cause the electrically conductive material in the hole to slightly protrude out from the backside surface of the wafer.
17. The method of claim 15 further comprising attaching a solder ball to the electrically conductive material within the hole at the backside surface of the wafer.
18. The method of claim 15 , wherein the act of forming the hole comprises performing an etch through the bond pad to a portion of the wafer below the bond pad.
19. The method of claim 18 , wherein the act of forming the hole comprises forming the hole approximately 150-300 micrometers deep.
20. The method of claim 15 , wherein the act of filling comprises filling the hole with solder.
21. The method of claim 15 , wherein the act of thinning comprises backgrinding the backside surface of the wafer.
22. The method of claim 15 further comprising the act of attaching a carrier to the frontside of the wafer in order to perform the act of thinning.
23. The method of claim 22 further comprising detaching the carrier after performing the act of thinning.
24. The method of claim 15 , wherein the act of thinning comprises performing a chemical mechanical polish on the backside surface of the wafer.
25. A method of forming an interconnect through a wafer, the method comprising:
forming a blind hole through a bond pad in the wafer, the hole extending only partially through the wafer from a frontside surface of the wafer to a portion of the wafer below a lower surface of the bond pad;
filling the hole with an electrically conductive material, the electrically conductive material being in electrical contact with the bond pad and extending from the frontside surface to an opposite end of the hole;
thinning a backside surface of the wafer up to a lower portion of the hole, wherein the backside surface is thinned after filling the hole with the electrically conductive material;
insulating the backside surface of the wafer; and
attaching an electrically conductive ball to the electrically conductive material within the hole and on the backside surface of the wafer, such that the electrically conductive ball is in electrical contact with the bond pad.
26. A method for forming an interconnect through a wafer, the method comprising:
forming a hole through a bond pad in the wafer, the hole extending from a frontside surface of the wafer to a backside surface of the wafer;
coating sidewalls of the hole with a dielectric;
filling the hole with an electrically conductive material, the electrically conductive material being electrically coupled to the bond pad and extending from the frontside surface to the backside surface, wherein the electrically conductive material is co-planar and/or recessed with respect to the frontside surface and surrounded by a dielectric passivation material at the frontside surface; and
performing a chemical mechanical polish on the passivation material after filling the hole with the second conductive material.
27. The method of claim 26 further comprising performing a wet etch on at least the frontside of the wafer.
28. A method of forming a through-wafer interconnect, the method comprising the acts of:
forming a blind hole through a bond pad in the wafer, the hole extending only partially through the wafer from a frontside surface of the wafer to a portion of the wafer below a lower surface of the bond pad;
filling the hole with an electrically conductive material, the electrically conductive material being electrically coupled to the bond pad and extending from the frontside surface to an opposite end of the hole;
thinning the wafer from a backside surface of the wafer until the hole is in contact with the backside surface of the wafer, wherein the backside surface is thinned after filling the hole with an electrically conductive material; and
passivating the backside surface of the wafer.
29. The method of claim 28 further comprising attaching a solder ball to the electrically conductive material within the hole at the backside surface of the wafer, the ball being electrically coupled to the bond pad.
30. A method for forming an interconnect, the method comprising the acts of:
forming an electrically conductive interconnect through a wafer, including:
forming a hole completely through the wafer;
coating sidewalls of the hole with a dielectric; and
filling the hole with a conductive material, wherein the interconnect extends from a frontside surface of the wafer to a backside surface of the wafer and is at least substantially co-planar with the frontside surface and surrounded by a dielectric passivation material at the frontside surface;
forming an electrically conductive bond between the interconnect and a bond pad within the wafer; and
performing a chemical mechanical polish on the passivation material after filling the hole with the conductive material.
31. The method of claim 30 further comprising:
forming an electrically conductive bond between an electrically conductive ball and the electrically conductive interconnect on at least one of the frontside surface and the backside surface.
32. The method of claim 30 further comprising performing a wet etch on at least the frontside of the wafer.