Focus ring and plasma processing apparatus
A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.
1. A focus ring having an annular shape, disposed to surround a substrate to be processed on a lower electrode for mounting the substrate to be processed thereon in a processing chamber for accommodating the substrate to be processed on which a specified plasma process is to be performed, which comprises:
a lower member made of a dielectric; and
an upper member disposed on the lower member and made of a conductive material,
wherein the upper member is grounded,
wherein a predetermined gap is provided between the upper member and the lower member to thereby maintain a temperature of the lower member to be different from that of the upper member,
wherein the upper member is grounded by being connected to a conductive high frequency grounding member, whose surface is coated with an insulating layer, and the insulating layer protects the high frequency grounding member from a plasma of the specified plasma process and prevents a DC current from flowing through the high frequency grounding member,
wherein an insulation member is disposed between the lower member and the high frequency grounding member, and
wherein the insulation member surrounds the lower member and prevents a DC voltage component from leaking to outside from the lower electrode, and the upper member is in contact with the insulation member without a gap.
2. The focus ring of claim 1 , wherein an annular insulation member is disposed at an outer periphery of the upper member.
3. The focus ring of claim 1 , wherein the upper member is disposed such that a bottom of the upper member is positioned higher by from 1.5 to 2.5 mm than a top surface of the substrate to be processed.
4. The focus ring of claim 1 , wherein a temperature of the upper member is equal to or higher than 250° C. during a plasma process.
5. The focus ring of claim 1 , wherein a temperature of the lower member is equal to or higher than 100° C. during a plasma process.
6. The focus ring of claim 1 , wherein the predetermined gap between the upper member and the lower member is about 0.5 mm.
7. The focus ring of claim 6 , wherein a diametrical direction length of a portion of the lower member which faces the upper member with the predetermined gap therebetween ranges from 5 to 10 mm.
8. A plasma processing apparatus comprising:
a processing chamber for accommodating a substrate to be processed on which a predetermined plasma process is to be performed;
a lower electrode, installed in the processing chamber, for mounting the substrate to be processed thereon; and
a focus ring having an annular shape, wherein the focus ring comprises
an annular lower member made of a dielectric and disposed on the lower electrode to surround the substrate to be processed; and
an annular upper member disposed on the lower member and made of a conductive material, the annular upper member having a ground potential,
wherein a predetermined gap is provided between the upper member and the lower member to thereby maintain a temperature of the lower member to be different from that of the upper member,
wherein the upper member is grounded by being connected to a conductive high frequency grounding member, whose surface is coated with an insulating layer, and the insulating layer protects the high frequency grounding member from a plasma of the specified plasma process and prevents a DC current from flowing through the high frequency grounding member,
wherein an insulation member is disposed between the lower member and the high frequency grounding member, and
wherein the insulation member surrounds the lower member and prevents a DC voltage component from leaking to outside from the lower electrode, and the upper member is in contact with the insulation member without a gap.