Semiconductor device having improved contact hole structure and method for fabricating the same
View Patent ↗A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and afooting profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
1. A method for fabricating a contact hole comprising:
a) forming an amine source layer on an antireflective layer, the antireflective layer being on a dielectric layer on a semiconductor substrate;
b) forming a photoresist layer on the amine source layer;
c) forming a first hole pattern having a T profile and a footing profile by exposing and developing the photoresist layer;
d) forming a second hole pattern at which the profiles are changed by reflowing the photoresist layer; and
e) forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
2. The method of claim 1 , wherein the amine source layer comprises HMDS.
3. The method of claim 1 , wherein the reflowing comprises heating the photoresist layer.
4. The method of claim 1 , further comprising forming said antireflective layer on the dielectric layer.
5. The method of claim 4 , further comprising forming said dielectric layer on said semiconductor substrate.
6. A method for fabricating a contact hole, comprising:
a) forming an amine source layer on an antireflective layer, said antireflective layer being on a dielectric layer on a semiconductor substrate;
b) forming a photoresist layer on the amine source layer;
c) forming a hole pattern in the photoresist layer;
d) reflowing the photoresist layer; and
e) selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask to form said contact hole.
7. The method of claim 6 , wherein the amine source layer comprises a silyl amine, a cyclic amine, ammonia, or an ammonium salt.
8. The method of claim 7 , wherein the amine source layer comprises hexamethyldisilazane.
9. The method of claim 7 , wherein the amine source layer comprises N-methylpyrrolidine, N-methylpyrroline, N-methylpyrrole, pyridine and/or morpholine.
10. The method of claim 7 , wherein the amine source layer comprises an ammonium hydroxide.
11. The method of claim 6 , wherein the reflowing comprises heating the photoresist layer until the contact hole has a substantially vertical sidewall.
12. The method of claim 6 , further comprising forming said antireflective layer on the dielectric layer.
13. The method of claim 12 , further comprising forming said dielectric layer on said semiconductor substrate.
14. The method of claim 6 , wherein the contact hole has a width of 0.13 μm or less.
15. The method of claim 6 , wherein the contact hole has a width less than a corresponding reticle design rule.