Controlled breakdown phase change memory device
View Patent ↗A phase change memory material may be deposited over an electrode in a pore through an insulator. The adherence of the memory material to the insulator may be improved by using a glue layer. At the same time, a breakdown layer may be formed in the pore between the memory material and electrode.
1. A method comprising:
using a conductive layer to adhere a phase change material to an insulator; and
forming a dielectric layer between the phase change material and an electrode such that current between the phase change material and the electrode must pass through said dielectric layer.
2. The method of claim 1 including forming the insulator over said electrode and forming a pore in said insulator down to said electrode.
3. The method of claim 2 including forming said conductive layer over said insulator and forming said pore through said conductive layer and said insulator.
4. The method of claim 3 including forming said dielectric layer in said pore over said conductive layer.
5. The method of claim 4 including removing the portion of said dielectric layer over said conductive layer.
6. The method of claim 5 including using selective etching to remove said conductive layer.
7. The method of claim 5 including using a lift-off technique to remove said conductive layer.
8. The method of claim 1 including forming an upper electrode over said phase change material and forming a breakdown channel through said dielectric layer.
9. The method of claim 1 including selectively depositing said dielectric layer on said electrode.
10. The method of claim 1 including forming said dielectric layer over said electrode, depositing an etch stop layer over said dielectric layer, forming the insulator over said etch stop layer, and forming said conductive layer over said insulating layer.
11. The method of claim 10 including forming said pore through said conductive layer and said insulator down to said etch stop layer.
12. The method of claim 11 including selectively removing the exposed portion of said etch stop layer over said dielectric layer.
13. A phase change memory comprising:
a substrate;
an electrode on said substrate;
an insulator having a pore formed therein over said substrate, said pore extending to said electrode;
a conductive layer over said insulator;
a phase change material adhered to said insulator by said conductive layer, said phase change material in said pore; and
a dielectric layer between said phase change material and said electrode such that current between the phase change material and the electrode must pass through said dielectric layer.
14. The memory of claim 13 including a breakdown channel in said dielectric material.
15. The memory of claim 13 wherein said dielectric layer is substantially planar.
16. The memory of claim 13 wherein said dielectric layer is generally u-shaped and lines said pore.
17. The memory of claim 13 wherein said conductive layer includes titanium.
18. A system comprising:
a substrate;
a phase change memory formed on the substrate, said memory including an electrode on said substrate and the insulator having a pore formed therein over said substrate, said pore extending to said electrode, a conductive layer over said insulator, a phase change material adhered to said insulator by said conductive layer, said phase change material in said pore and a dielectric layer between said phase change material and said electrode such that current between the phase change material and the electrode must pass through said dielectric layer; and
a battery receptacle coupled to said phase change memory.
19. The system of claim 18 including a breakdown channel in said dielectric material.
20. The system of claim 18 wherein said dielectric layer is substantially planar.
21. The system of claim 18 wherein said dielectric layer is generally U-shaped and lines said pore.
22. The system of claim 18 wherein conductive layer includes titanium.
23. The system of claim 18 including a processor coupled to said memory.