Patent Assignment
Reel/Frame 028055/0625
Assignment of Assignor's Interest
Recorded: 2012-04-17
Received: 2012-04-17
Pages: 57
Assignor
INTEL CORPORATION
Executed: 2008-03-25
Assignee
NUMONYX B.V.
A-1 BUSINESS CENTRE, Z.A. VERS LA PIECE, RTE DE L'ETRAZ, ROLLE, CHX, 1180, SWITZERLAND
Covered Properties
(51)
Locking Entries Into Translation Lookaside Buffers
Application:
13/197,221 →
High Density nor Flash Array Architecture
Application:
11/823,518 →
Read Window in Chalcogenide Semiconductor Memories
Application:
11/595,055 →
Self-Aligned Biopolar Junction Transistors
Application:
11/411,311 →
Large Format Emissive Display
Application:
11/325,961 →
Compacting Circuit Responses
Application:
11/251,664 →
Fabricating sub-lithographic contacts
Application:
11/193,952 →
Phase Change Memory with U-Shaped Chalcogenide Cell
Application:
11/185,488 →
Heating Phase Change Material
Application:
11/103,188 →
Locking entries into translation lookaside buffers
Application:
11/092,432 →
Phase Change Memory Bits Reset Through a Series of Pulses of Increasing Amplitude
Application:
11/058,797 →
Forming a Carbon Layer Between Phase Change Layers of a Phase Change Memory
Application:
11/037,850 →
Reading Phase Change Memories to Reduce Read Disturbs
Application:
11/029,981 →
Depositing Titanium Silicon Nitride Films for Forming Phase Change Memories
Application:
10/977,186 →
Phase Change Memory with Damascene Memory Element
Application:
10/949,090 →
Phase Change Memory with a Select Device Having a Breakdown Layer
Application:
10/948,884 →
Forming Phase Change Memory Arrays
Application:
10/939,145 →
Controlled Breakdown Phase Change Memory Device
Application:
10/939,237 →
Compensating the Workfunction of a Metal Gate Transistor for Abstraction by the Gate Dielectric Layer
Application:
10/900,666 →
Initializing Phase Change Memories
Application:
10/881,664 →
Providing Current for Phase Change Memories
Application:
10/880,692 →
Method and Apparatus to Write Back Data
Application:
10/799,555 →
Rewritable Fuse Memory
Application:
10/744,664 →
Controlling the Location of Conduction Breakdown in Phase Change Memories
Application:
10/633,869 →
Memory Driver Architecture and Associated Methods
Application:
10/620,469 →
Using a Transversal Filter to Compensate for Dispersion
Application:
10/409,287 →
Dielectric with Sidewall Passivating Layer
Application:
10/379,061 →
Phase Change Memory and Method Therefor
Application:
10/318,984 →
Isolating Phase Change Memory Devices
Application:
10/319,183 →
Analyzing Interconnect Structures
Application:
10/281,857 →
In-Situ Sequential High Density Plasma Deposition and Etch Processing for Gap Fill
Application:
10/236,203 →
Executing Applications from a Semiconductor Nonvolatile Memory
Application:
10/215,549 →
Refreshing Memory Cells of a Phase Change Material Memory Device
Application:
10/212,630 →
Flash Assisted Annealing
Application:
10/210,866 →
Cluster Based Redundancy Scheme for Semiconductor Memories
Application:
10/196,401 →
Forming Ferroelectric Polymer Memories
Application:
10/160,641 →
Phase-Controlled Fiber Bragg Gratings and Manufacturing Methods
Application:
10/142,329 →
Promoting Adhesion of Fluoropolymer Films to Semiconductor Substrates
Application:
10/131,017 →
Accurately Tuning Resistors
Application:
10/126,402 →
Measuring Optical Phase
Application:
10/119,501 →
Synchronizing Data or Signal Transfer Across Clocked Logic Domains
Application:
10/038,956 →
Generating Pulses for Resetting Integrated Circuits
Application:
09/966,481 →
Releasing Functional Blocks in Response to a Determination of a Supply Voltage Predetermined Level and a Logic Predetermined Initial State
Application:
09/967,180 →
Reducing Shunts in Memories with Phase-Change Material
Application:
09/953,833 →
Phase Change Material Memory Device
Application:
09/948,830 →
Multiple Layer Phase-Change Memory
Application:
09/945,331 →
Repairable Tiled Displays
Application:
09/906,342 →
Providing Optical Elements Over Emissive Displays
Application:
09/904,268 →
Barrier Material Encapsulation of Programmable Material
Application:
09/896,530 →
Reduced Area Intersection Between Electrode and Programming Element
Application:
09/896,531 →
Sharing Classes Between Programs
Application:
09/756,579 →