Polymer and chemically amplified resist composition containing the same
A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent. The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
1. A polymer consisting essentially of repeating units l, m, and n represented by Formula 1:
wherein
X is one group selected from the group consisting of a C 3 -C 30 vinyl ether derivative, a C 3 -C 30 maleic anhydride derivative, and a C 3 -C 30 olefin derivative not having at a double bond position of the C 3 -C 30 olefin derivative an electron withdrawing group selected from the group consisting of a halogen group, a nitrile group (—CN), a nitro group (—NO 2 ), a trifluoromethyl group (—CF 3 ) and a sulfon group (—SO 2 );
R 1 and R 3 are independently selected from the group consisting of hydrogen, C 1 -C 30 alkyl, C 1 -C 30 alkoxyalkyl, C 1 -C 30 halogen-substituted alkyl, and C 1 -C 30 halogen-substituted alkoxyalkyl;
R 2 is trifluoromethyl; and
wherein the repeat unit 1 comprises from about 5 to about 70 mole % of the polymer, the repeat unit m comprises from about 20 to about 70 mole % of the polymer, and the repeat unit n comprises from about 10 to about 70 mole % of the polymer, and l+m+n=100%.
2. A chemically amplified resist composition comprising a polymer consisting essentially of repeating units l, m, and n represented by Formula 1, a photoacid generator, and a solvent:
wherein
X is one group selected from the group consisting of a C 3 -C 30 vinyl ether derivative, a C 3 -C 30 maleic anhydride derivative, and a C 3 -C 30 olefin derivative not having at a double bond position of the C 3 -C 30 olefin derivative an electron withdrawing group selected from the group consisting of a halogen group, a nitrile group (—CN), a nitro group (—NO 2 ), a trifluoromethyl group (—CF 3 ) and a sulfon group (—SO 2 );
R 1 and R 3 are independently selected from the group consisting of hydrogen, C 1 -C 30 alkyl, C 1 -C 30 alkoxyalkyl, C 1 -C 30 halogen-substituted alkyl and C 1 -C 30 halogen-substituted alkoxyalkyl;
R 2 is trifluoromethyl; and
wherein the repeat unit 1 comprises from about 5 to about 70 mole % of the polymer, the repeat unit m comprises from about 20 to about 70 mole % of the polymer, and the repeat unit n comprises from about 10 to about 70 mole % of the polymer, and l+m+n =100%.
3. The chemically amplified resist composition as claimed in claim 2 , wherein the photoacid generator is selected from the following compounds:
wherein
R 6 and R 7 are independently alkyl, aryl, perfluoroalkyl, benzyl, or allyl;
R 4 and R 5 are independently hydrogen, alkyl, halogen, alkoxy, aryl, thiophenoxy, thioalkoxy, or alkoxycarbonylmethoxy; and
o is an integer from 1 to 8.
4. The chemically amplified resist composition as claimed in claim 2 , wherein the photoacid generator is included in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the polymer.
5. The chemically amplified resist composition as claimed in claim 2 , wherein the polymer represented by the Formula 1 is included in an amount of at least 3 wt. % with respect to the total weight of the resist composition.