Method of forming a semiconductor device using a silicide etching mask

1. A method to fabricate a silicide of a semiconductor device comprising:

forming a gate electrode;

depositing an insulating layer on the gate electrode;

removing a predetermined portion of the insulating layer in order to expose a top surface and a portion of the sidewalls of the gate electrode;

forming silicide on the exposed top surface and portion of the sidewalls of the gate electrode; and

etching the insulating layer while using the silicide as an etching mask.

2. The method as defined by claim 1 , wherein the insulating layer comprises an oxide material.

3. The method as defined by claim 1 , wherein the predetermined portion of the insulating layer is removed by performing a CMP process.

4. The method as defined by claim 1 , wherein the predetermined portion of the insulating layer is removed by etching without using an etching mask.

5. The method as defined by claim 1 , wherein forming a silicide comprises: depositing a silicide formation material on the gate electrode; forming silicide through an annealing process; and removing unreacted silicide material.

6. The method as defined by claim 5 , wherein the silicide formation material comprises a material selected from transition elements or an alloy of transition elements.

7. The method as defined by claim 5 , wherein the silicide formation material comprises a material selected from the group comprising: tungsten, titanium, tantalum, cobalt, nickel and hafnium.

8. The method as defined by claim 1 , wherein etching the insulating layer forms at least one spacer under the silicide and on the sidewall of the gate electrode.

9. The method as defined by claim 8 , wherein the spacer is formed lower than the gate electrode.