Manufacturing method of semiconductor device
View Patent ↗When Ti as a barrier metal layer is brought into contact with a diffusion region of boron provided on a surface of a silicon substrate, there is a problem that boron is absorbed by titanium silicide, and contact resistance is increased. Although there is a method of additionally implanting boron whose amount is equal to the amount of boron absorbed by titanium silicide, there has been a problem that when boron is additionally implanted into, for example, a source region in a p-channel type, the additionally added boron is diffused deeply at the diffusion step, and characteristics are deteriorated. According to the invention, after formation of an element region, boron is additionally implanted into the whole surface at a dosage of about 10% of an element region, and is activated in the vicinity of a surface of a silicon substrate by an alloying process of a barrier metal layer. By this, a specified concentration profile of the element region is kept, and the impurity concentration only in the vicinity of the surface can be raised. Accordingly, even if boron is absorbed by titanium silicide, a specified boron concentration can be kept in the element region, and the increase of contact resistance can be suppressed.
1. A manufacturing method of a semiconductor device, comprising:
providing a semiconductor substrate;
performing a first ion implantation into the substrate to form a p-type impurity diffusion region;
performing a second ion implantation into the substrate to form an n-type impurity diffusion region;
forming an interlayer insulating film on the p-type impurity diffusion region and the n-type impurity diffusion region after the first and second ion implantations;
forming a contact hole in the interlayer insulating film to expose at least part of n-type impurity diffusion region and part of the p-type impurity diffusion region;
performing a third ion implantation into the exposed p-type impurity diffusion region and the exposed n-type impurity diffusion region through the contact hole of the interlayer insulating film, the third ion implantation being of a p-type impurity; and
depositing a high melting point metal layer on the interlayer insulating film so that the high melting point metal layer is connected with at least the p-type impurity diffusion region through the contact hole of the interlayer insulating film.
2. A manufacturing method of a semiconductor device, comprising:
forming a drain region, a gate electrode, a source region and a body region on a semiconductor substrate;
forming on the substrate an interlayer insulating film having a contact hole to expose at least part of the body region and part of the source region;
implanting a p-type impurity into the exposed source region and the exposed body region through the contact hole; and
depositing a high melting point metal layer on the interlayer insulating film so that the high melting point metal layer is connected with at least the source region through the contact hole of the interlayer insulating film.
3. A manufacturing method of a semiconductor device according to claim 1 or 2 , wherein the high melting point metal layer comprises titanium.
4. A manufacturing method of a semiconductor device according to claim 2 , wherein the p-type impurity comprises boron.
5. A manufacturing method of a semiconductor device according to claim 2 , wherein the p-type impurity is implanted at a dosage of about 1/10 of an impurity dosage required to form the source region.
6. A manufacturing method of a semiconductor device according to claim 2 , wherein the p-type impurity is implanted at a dosage of about 1/10 of an impurity dosage required to form the body region.
7. A manufacturing method of a semiconductor device according to claim 2 , wherein the p-type impurity is ion-implanted and a peak of a concentration profile of the p-type impurity is positioned within about 1000 Å from a surface of the element region.
8. A manufacturing method of a semiconductor device according to claim 4 , wherein the p-type impurity is implanted at a dosage of about 4×10 14 cm −2 to 1×10 15 cm −2 .