CMOS image sensor and manufacturing method thereof
View Patent ↗A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.
1. A method for manufacturing a CMOS image sensor, comprising:
forming a photodiode on a substrate;
forming an insulating layer over the substrate;
forming a contact hole in the insulating layer over the photodiode; and
forming a gate terminal over the insulating layer having the contact hole,
wherein the gate terminal is directly connected to the photodiode through the contact hole which is filled with a gate polysilicon layer.
2. The method of claim 1 , wherein the insulating layer is formed as at least one layer and is formed of any of silicon nitride, silicon oxide nitride, and transition metal oxide.
3. The method of claim 1 , wherein the step of forming the gate terminal further includes:
forming the gate polysilicon layer on the insulating layer having the contact hole; and
patterning the gate polysilicon layer so as to form the gate terminal.
4. A method for manufacturing a CMOS image sensor, comprising:
forming a photodiode on a substrate;
forming a device isolation region and an active device in the substrate;
forming an insulating layer over the substrate;
forming a contact hole in the insulating layer over the photodiode; and
forming a gate terminal over the insulating layer coupling the photodiode and the active device; and
wherein the gate terminal is directly connected to the photodiode through the contact hole without a connecting member.