IP Library › Granted Patent US 7,582,181
Granted Patent B2
US 7,582,181 · App. 10/955,326 · Granted Sep 1, 2009

Method and system for controlling a velocity field of a supercritical fluid in a processing system

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 7,582,181
App. No.
10/955,326
Granted
Sep 1, 2009
Kind
B2
Abstract

A method and system for controlling a velocity field in a processing system is described. In an exemplary embodiment described, the system includes a multi-outlet exhaust manifold having three or more outlets coupled to the processing system adjacent a surface of a substrate to be process. The three or more outlets are located adjacent the substrate in order to provide for a uniform flow of fluid above the surface of the substrate. Additionally, the flow of fluid through the three or more outlets is cyclically and sequentially alternated.

Claims (45)

1. A processing system for treating a substrate comprising:

a processing chamber configured to treat said substrate with a fluid, introduced therein, having substantially supercritical fluid properties;

a supercritical fluid source;

a fluid supply system coupled to said processing chamber, and configured to introduce a fluid from said supercritical fluid source to said processing chamber;

a fluid flow system coupled to said processing chamber, and configured to flow said fluid through said processing chamber over said substrate;

one or more inlets coupled to said fluid flow system, and configured to introduce said fluid to said processing chamber;

an outlet manifold coupled to said fluid flow system and having:

three or more outlets coupled to said fluid flow system and positioned adjacent a surface of said substrate, wherein said three or more outlets are configured to remove said fluid from said processing chamber, and

a valve manifold coupled to said three or more outlets and configured to cyclically and sequentially alter the flow of said fluid through said three or more outlets; and

said one or more inlets being coupled to said processing chamber at a peripheral edge of said substrate.

2. The processing system of claim 1 , wherein said one or more inlets are configured to introduce said fluid radially inward over said substrate.

3. The processing system of claim 2 , wherein said one or more inlets are further configured to introduce said fluid with an azimuthal velocity component.

4. A processing system for treating a substrate comprising:

a processing chamber configured to treat said substrate with a fluid, introduced therein, having substantially supercritical fluid properties;

a supercritical fluid source;

a fluid supply system coupled to said processing chamber, and configured to introduce a fluid from said supercritical fluid source to said processing chamber;

a fluid flow system coupled to said processing chamber, and configured to flow said fluid through said processing chamber over said substrate;

one or more inlets coupled to said fluid flow system, and configured to introduce said fluid to said processing chamber;

an outlet manifold coupled to said fluid flow system and having:

three or more outlets coupled to said fluid flow system and positioned adjacent a surface of said substrate, wherein said three or more outlets are configured to remove said fluid from said processing chamber, and

a valve manifold coupled to said three or more outlets and configured to cyclically and sequentially alter the flow of said fluid through said three or more outlets; and

said three or more outlets being located at substantially the same radial location adjacent said substrate.

5. The processing system of claim 4 , wherein said three or more outlets include an outlet at substantially the center of said substrate.

6. A processing system for treating a substrate comprising:

a processing chamber configured to treat said substrate with a fluid, introduced therein, having substantially supercritical fluid properties;

a supercritical fluid source;

a fluid supply system coupled to said processing chamber, and configured to introduce a fluid from said supercritical fluid source to said processing chamber;

a fluid flow system coupled to said processing chamber, and configured to flow said fluid through said processing chamber over said substrate;

one or more inlets coupled to said fluid flow system, and configured to introduce said fluid to said processing chamber;

an outlet manifold coupled to said fluid flow system and having:

three or more outlets coupled to said fluid flow system and positioned adjacent a surface of said substrate, wherein said three or more outlets are configured to remove said fluid from said processing chamber, and

a valve manifold coupled to said three or more outlets and configured to cyclically and sequentially alter the flow of said fluid through said three or more outlets; and

said valve manifold comprising a shaft having at least one passage that is configured to rotate to three or more angular positions, whereby each of said three or more angular positions permits the flow of fluid from a unique outlet of said three or more outlets through said at least one passage to a single circulation line in said fluid flow system.

7. The processing system of claim 6 , wherein said shaft includes three or more ball valves, each of said three or more ball valves having a passage configured to uniquely couple one of said three or more outlets to said single circulation line at one of said three or more angular positions.

8. A processing system for treating a substrate comprising:

a processing chamber configured to treat said substrate with a fluid, introduced therein, having substantially supercritical fluid properties;

a supercritical fluid source;

a fluid supply system coupled to said processing chamber and the supercritical fluid source, and configured to introduce a fluid from said supercritical fluid source to said processing chamber;

a fluid flow system coupled to said processing chamber, and configured to flow said fluid through said processing chamber over said substrate;

one or more inlets coupled to said fluid flow system, and configured to introduce said fluid to said processing chamber;

an outlet manifold coupled to said fluid flow system and having:

three or more outlets coupled to said fluid flow system and positioned adjacent a surface of said substrate, wherein said three or more outlets are configured to remove said fluid from said processing chamber, and

a valve manifold coupled to said three or more outlets and configured to cyclically and sequentially alter the flow of said fluid through said three or more outlets; and

said three or more outlets being located at a radial location ranging from 5% to 100% of the radius of said substrate.

9. The processing system of claim 8 , wherein said three or more outlets are located at a radial location ranging from 50% to 80% of the radius of said substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2005
From: BABIC, DARKO
To: TOKYO ELECTRON LIMITED
Reel/Frame 015848/0859 →
Continuity (1)
Related Publication 20060065636A1 · Mar 30, 2006