Content addressable memory cell including resistive memory elements
View Patent ↗A content addressable memory cell is described. In one embodiment, the content addressable memory cell includes first and second resistive memory elements being coupled in a first series connection and being connected between a first potential value and a second potential value being smaller than said first potential value, and means for their switching between states exhibiting different electric resistance values. The memory cell includes a first field effect transistor and a second field effect transistor, said first and second transistors having drain-source-paths and gate electrodes, said drain-source-paths of said first and second transistors being connected in a second series connection and being connected to at least one of first current lines. The first current line is connected to a potential value level detector for sensing a potential difference as to said third potential value.
1. A content addressable memory cell comprising:
a first resistive memory element and a second resistive memory element being able to be brought into states exhibiting different resistance values and being coupled in a first series connection, the first series connection of the resistive memory elements being connected between a first potential value and a second potential value being smaller than said first potential value; and
a first field effect transistor being a P-channel transistor and a second field effect transistor being an N-channel transistor having a common connection to the first resistive memory element and the second resistive memory element of the content addressable memory cell.
2. The memory cell of claim 1 ,
wherein the first and second PET transistors having drain-source-paths and gate electrodes, the drain-source-paths of the first and second transistors being connected in a second series connection and being connected to at least one of first current lines, said first current lines being precharged to a third potential value being smaller than said first potential value and being larger than said second potential value.
3. The memory cell of claim 2 , further comprising:
a second current line being connected to the second series connection of transistors between the first and second transistors.
4. The memory cell of claim 3 , wherein each one of the first and second transistors is connected to a separate one of the first current lines.
5. The memory cell of claim 3 , wherein the second potential value is zero.
6. The memory cell of claim 1 , wherein the resistive memory elements are magneto-resistive memory elements.
7. The memory cell of claim 1 , wherein the first resistive memory element comprises a first phase change memory element and the second resistive memory element comprises a second phase change memory element.
8. The memory cell of claim 1 , wherein the first resistive memory element comprises a first conductive bridging memory element and the second resistive memory element comprises a second conductive bridging memory element.
9. A content addressable magnetic memory cell comprising:
a first resistive magnetic memory element and a second resistive magnetic memory element being able to be brought into states exhibiting different resistance values and being coupled in a first series connection;
a first transistor being a P-channel transistor and a second transistor being an N-channel transistor, the first and second transistors having drain-source-paths and gate electrodes, the drain-source-paths of the first and second transistors being connected in a second series connection and being connected to at least one of first current lines, said first current lines being precharged to a third potential value being smaller than said first potential value and being larger than said second potential value; and
a second current line being connected to the second series connection of transistors between the first and second transistors.
10. The memory cell of claim 9 , wherein each one of the first and second transistors is connected to a separate one of the first current lines.
11. The memory cell of claim 9 , wherein the second potential value is zero.
12. A memory cell comprising:
a voltage divider configured to provide a first voltage, the voltage divider including a first resistive memory element and a second resistive memory element, the first resistive memory element and the second resistive memory element configured to be set to different logic states,
a first transistor configured to turn on in response to the first voltage exceeding a first value to provide a first signal; and
a second transistor configured to turn on in response to the first voltage exceeding a second value greater than the first value to provide a second signal,
wherein the first signal and the second signal indicate a logic state of the first resistive memory element and the second resistive memory element.
13. The memory of claim 12 , wherein the first resistive memory element comprises a first phase change memory element and the second resistive memory element comprises a second phase change memory element.
14. The memory of claim 12 , wherein the first resistive memory element comprises a first magneto-resistive memory element and the second resistive memory element comprises a second magneto-resistive memory element.
15. The memory of claim 12 , wherein the first resistive memory element comprises a first conductive bridging memory element and the second resistive memory element comprises a second conductive bridging memory element.
16. A method for sensing the state of a memory cell, the method comprising:
dividing a first voltage between a first resistive memory element and a second resistive memory element to provide a second voltage, the first resistive memory element and the second resistive memory element configured to be set to different logic states;
providing a first signal in response to the second voltage exceeding a first value; and
providing a second signal in response to the second voltage exceeding a second value, wherein the first signal and the second signal indicate a logic state of the first resistive memory element and the second resistive memory element wherein providing the first signal comprises turning on a first transistor in response to the second voltage exceeding the first value; and
wherein providing the second signal comprises turning on a second transistor in response to the second voltage exceeding the second value.
17. The method of claim 16 , wherein the first resistive memory element comprises a first phase change memory element and the second resistive memory element comprises a second phase change memory element.
18. The method of claim 16 , wherein the first resistive memory element comprises a first magneto-resistive memory element and the second resistive memory element comprises a second magneto-resistive memory element.
19. The method of claim 16 , wherein the first resistive memory element comprises a first conductive bridging memory element and the second resistive memory element comprises a second conductive bridging memory element.