Inductors in semiconductor devices and methods of manufacturing the same
Inductors in semiconductor devices and methods of manufacturing the same are disclosed. A disclosed inductor includes: a semiconductor substrate; a first dielectric layer on the substrate; a first spiral shaped, metal wire on the first dielectric layer; and a second dielectric layer on the first metal wire and the first dielectric layer. The second dielectric layer has a spiral shaped contact hole exposing the first metal wire. The inductor also includes a second metal wire on the second dielectric layer and electrically connected to the first metal wire through the contact hole. A boundary line of the second metal wire is substantially aligned with a boundary line of the first metal wire.
1 . An inductor comprising:
a semiconductor substrate;
a first dielectric layer on the substrate;
a first spiral shaped, metal wire on the first dielectric layer;
a second dielectric layer on the first metal wire and the first dielectric layer, the second dielectric layer having a spiral shaped contact hole exposing the first metal wire; and
a second metal wire on the second dielectric layer and electrically connected to the first metal wire through the contact hole, wherein a boundary line of the second metal wire is substantially aligned with a boundary line of the first metal wire.
2 . An inductor as defined in claim 1 , wherein a width of the contact hole is narrower than a width of the first metal wire.
3 . A method of manufacturing an inductor comprising:
sequentially forming a first dielectric layer and a first metal layer on a semiconductor substrate;
etching the first metal layer to form a first spiral shaped, metal wire on the first dielectric layer;
forming a second dielectric layer on the first metal wire and the first dielectric layer;
etching the second dielectric layer to form a spiral shaped contact hole over the first metal wire;
forming a second metal layer on the second dielectric layer, the second metal layer filling the contact hole; and
etching the second metal layer to form a second spiral shaped, metal wire having a boundary line in substantial alignment with a boundary line of the first metal wire.
4 . A method as defined in claim 3 , wherein etching the second metal wire comprises:
forming a spiral shaped mask pattern on the second metal layer, the spiral shaped mask pattern having a boundary line in substantial alignment with the boundary line of the first metal wire;
etching the second metal layer using the mask pattern; and
removing the mask pattern.
5 . A method as defined in claim 4 , wherein the mask pattern is a photoresist pattern.
6 . A method as defined in claim 4 , wherein the mask pattern is a dielectric layer pattern that is formed by selectively etching a third dielectric layer formed on the second metal layer.
7 . A method as defined in claim 6 , wherein a ratio of an etch selectivity of a material forming the third dielectric layer to an etch selectivity of the second metal layer is about 10:1.
8 . A method as defined in claim 7 , wherein the third dielectric layer is formed of a silicon oxide layer, a silicon nitride layer or a composition layer of a silicon oxide layer and a silicon nitride layer.
9 . A method as defined in claim 3 , wherein the second dielectric layer fills a space between at least two adjacent portions of the first metal wire.