Epitaxially grown fin for FinFET
View Patent ↗A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.
1. A method of forming a fin for a fin field effect transistor (FinFET), comprising:
defining a trench in a layer of first material;
growing a second material in the trench to form the fin;
forming a spacer on an upper surface of the fin;
removing the layer of first material;
forming a liner on the spacer and fin, the liner comprising a third material.
2. The method of claim 1 , wherein the first material comprises an oxide.
3. The method of claim 1 , wherein defining a trench comprises:
forming the layer of first material on a substrate; and
selectively etching the layer to define the trench.
4. The method of claim 1 , wherein growing the second material comprises epitaxially growing the second material.
5. The method of claim 1 , wherein removing the layer of first material comprises stripping the layer.
6. The method of claim 1 , wherein forming the spacer comprises depositing a third material on the upper surface.
7. The method of claim 6 , wherein the third material comprises a nitride.
8. The method of claim 1 , wherein the second material comprises silicon.
9. The method of claim 1 , wherein the third material comprises a nitride.
10. The method of claim 1 , wherein the third material comprises an oxide.
11. The method of claim 1 , further comprising:
removing the spacer and liner.
12. The method of claim 11 , wherein removing the spacer and liner comprises:
stripping the spacer and liner.
13. A method of forming a fin for a fin field effect transistor (FinFET), comprising:
defining a trench in a layer of first material;
growing a second material in the trench to form the fin;
removing the layer of first material;
forming a liner on the fin, the liner comprising a third material; and
removing the liner to leave the fin.
14. The method of claim 13 , wherein growing the second material comprises:
epitaxially growing the second material.
15. The method of claim 13 , wherein removing the liner comprises:
stripping the liner.
16. A method of forming a fin for a fin field effect transistor (FinFET), comprising:
defining a trench in a layer of first material, wherein a width of an opening of the trench is substantially smaller than a thickness of the layer;
growing a second material in the trench to form the fin; and
removing the layer of first material.
17. The method of claim 16 , further comprising:
forming a liner on the fin, the liner comprising a third material; and
removing the liner to leave the fin.