Polymer-based transistor devices, methods, and systems
One aspect of the present invention relates to a semiconductor transistor device with an annular gate surrounding, at least in part, a channel that conducts current between a first and second source/drain. Another aspect of the present invention relates to a semiconductor transistor device having an annular gate and containing a channel composed of a polymer material. Yet another aspect of the present invention relates to fabrication of a device utilizing a polymer channel surrounded, at least in part, by an annular gate. Still yet another aspect of the present invention relates to a system with a means to control (and/or amplify) current via an annular gate surrounding a channel which conducts current between a first and second source/drain. Still other aspects of the present invention include devices incorporating the present invention's devices, systems and methods such as computers, memory, handhelds and electronic devices.
1 . A semiconductor device, comprising:
a channel comprising a semiconductor material having controllable current flow properties;
a first and second source/drain interposed by the channel; and
an annular gate surrounding at least a portion of a volume of the second source/drain and at least a portion of a volume of the channel, controlling electrical flow through the channel between the first and second source/drain.
2 . The device of claim 1 , the second source/drain being cylindrical.
3 . The device of claim 1 , the channel being cylindrical.
4 . The device of claim 1 , the first source/drain being planar.
5 . The device of claim 1 , the first and second source/drain independently comprising at least one selected from the group consisting of aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, and alloys thereof; indium-tin oxide; polysilicon; doped amorphous silicon; and metal silicides.
6 . The device of claim 1 , the semiconductor material of the channel comprising a polymer material having a charge carrier doping.
7 . The device of claim 6 , the polymer material comprising at least one from a group consisting of polyacetylene; polyphenylacetylene; polydiphenylacetylene; polyaniline; poly(p-phenylene vinylene); polythiophene; polyporphyrins; porphyrinic macrocycles, thiol derivatized polyporphyrins; polymetallocenes, polyphthalocyanines; polyvinylenes; and polystiroles.
8 . The device of claim 1 , the annular gate comprising a polycrystalline silicon material.
9 . The device of claim 1 , the second source drain and the annular gate interposed by a dielectric material.
10 . The device of claim 9 , the dielectric material comprising an oxide material.
11 . The device of claim 1 , the annular gate and the channel interposed by a dielectric material.
12 . The device of claim 11 , the dielectric material comprising an oxide material.
13 . A method of fabricating a semiconductor device, comprising:
forming a first source/drain;
forming a channel comprising a semiconductor material on the first source/drain;
forming a second source/drain on the semiconductor material; and
forming an annular gate surrounding at least a portion of a volume of the channel and at least a portion of a volume of the second source/drain.
14 . The method of claim 13 , the first and second source/drain independently comprising at least one selected from the group consisting of aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, and alloys thereof; indium-tin oxide; polysilicon; doped amorphous silicon; and metal silicides.
15 . The method of claim 13 , wherein the semiconductor material of the channel comprising a polymer material having a charge carrier doping.
16 . The method of claim 15 , wherein the polymer material comprising at least one selected from a group consisting of polyacetylene; polyphenylacetylene; polydiphenylacetylene; polyaniline; poly(p-phenylene vinylene); polythiophene; polyporphyrins; porphyrinic macrocycles, thiol derivatized polyporphyrins; polymetallocenes, polyphthalocyanines; polyvinylenes; and polystiroles.
17 . The method of claim 13 , wherein the annular gate comprising a polycrystalline silicon material.
18 . A method of fabricating a semiconductor device, comprising:
forming a first source/drain;
forming a channel comprising a semiconductor material on the first source/drain;
forming a second source/drain on the semiconductor material;
depositing a dielectric material layer on the first and second source/drain and the channel; and
forming an annular gate surrounding at least a portion of a volume of the channel and at least a portion of a volume of the second source/drain with the dielectric material interposed between the annular gate and both the channel and the second source/drain.
19 . A system for manipulating electrical current comprising:
means for connecting circuitry to a first and second source/drain interposed by a channel comprising a polymer material; and
means for controlling current flow through the channel via an annular gate surrounding at least a portion of the second source/drain and at least a portion of the channel.
20 . A computer comprising the semiconductor device of claim 1 .
21 . A handheld electronic device comprising the semiconductor device of claim 1 .
22 . An amplification device comprising at least one of the semiconductor device(s) of claim 1 .
23 . A communication device comprising at least one of the semiconductor device(s) of claim 1 .
24 . A memory device comprising at least one of the semiconductor device(s) of claim 1.