Patent Assignment
Reel/Frame 019029/0976
Assignment of Assignor's Interest
Recorded: 2007-03-19
Received: 2007-03-19
Pages: 6
Assignor
ADVANCED MICRO DEVICES, INC.
Executed: 2007-01-31
Assignee
SPANSION INC.
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(19)
Stacked Organic Memory Devices and Methods of Operating and Fabricating
Application:
11/251,999 →
Etch-Back Process for Capping a Polymer Memory Device
Application:
11/102,004 →
Variable Density and Variable Persistent Organic Memory Devices, Methods, and Fabrication
Application:
11/034,071 →
Polymer-based transistor devices, methods, and systems
Application:
11/000,685 →
Control of Memory Devices Possessing Variable Resistance Characteristics
Application:
10/983,919 →
Method of Making an Organic Memory Cell
Application:
10/978,845 →
Memory Devices Containing a High-K Dielectric Layer
Application:
10/927,692 →
Polymer Dielectrics for Memory Element Array Interconnect
Application:
10/817,467 →
Using Organic Semiconductor Memory in Conjunction with a Mems Actuator for an Ultra High Density Memory
Application:
10/817,186 →
In-situ surface treatment for memory cell formation
Application:
10/817,131 →
Method and system for reducing short channel effects in a memory device by reduction of drain thermal cycling
Application:
10/689,298 →
A Method for Manufacturing a Double Bitline Implant
Application:
10/431,321 →
Self Aligned Memory Element and Wordline
Application:
10/314,591 →
Shallow Trench Isolation Approach for Improved Sti Corner Rounding
Application:
10/277,395 →
Nitridation of Gate Oxide by Laser Processing
Application:
10/273,184 →
Stepped pre-erase voltages for mirrorbit erase
Application:
10/155,767 →
Semiconductor Device with High Conductivity Region Using Shallow Trench
Application:
10/151,595 →
Method and system for reducing short channel effects in a memory device by reduction of drain thermal cycling
Application:
10/119,571 →
A Method of Forming Highly Conductive Semiconductor Structures via Plasma Etch
Application:
09/805,273 →