Stacked organic memory devices and methods of operating and fabricating
View Patent ↗The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
1. An organic memory device comprising:
at least a first organic memory cell and a second organic memory cell arranged in a vertical manner with respect to each other, the at least first organic memory cell and a second organic memory cell comprising:
a first electrode;
an organic material formed on the first electrode;
a second electrode formed on the organic material; and
at least one partition component to isolate the first and second organic memory cells, the at least one partition component facilitates access to at least one of the first organic memory cell and the second organic memory cell by being biased in a forward direction.
2. The device of claim 1 , the memory cell further comprising a conductivity facilitating passive material to aid interaction with the organic material.
3. The device of claim 2 , the passive material comprises one or more of copper sulfide, copper oxide, manganese oxide, titanium dioxide, indium oxide, silver sulfide, silver-copper-sulfide complex, gold sulfide, cerium sulfate, ammonium persulfate, iron oxide, lithium complexes, and palladium hydride.
4. The device of claim 1 , the partition component comprises at least one of a diode, a thin-filmed diode (TFD), a zener diode, a light emitting diode (LED), a transistor, a thin-filmed transistor (TFT), a silicon controlled rectifier (SCR), a uni junction transistor (UJT), and a field effect transistor (FET).
5. The device of claim 1 , the memory cell further includes an antireflective coating (ARC).
6. The device of claim 1 , comprising a plurality of the memory cells stacked vertically.
7. The device of claim 6 , comprising a plurality of vertical stacks of memory cells.
8. A system for organic memory cell fabrication comprising:
means for forming at least a first organic memory cell and a second organic memory cell arranged in a vertical manner with respect to each other comprising;
means for forming organic material over a first electrode;
means for layering a second electrode over the organic material; and
means for forming at least one partition component that isolates the first and second organic memory cells, the at least one partition component facilitates access to at least one of the first organic memory cell and the second organic memory cell by being biased in a forward direction.
9. The system of claim 8 , further comprising a means for forming the first electrode.
10. The system of claim 8 , further comprising a means for forming a passive layer on top of the first electrode to facilitate access to the organic material.
11. The system of claim 8 , further comprising a means for forming a plurality of memory cells on a single device.