Nitridation of gate oxide by laser processing
View Patent ↗A method of manufacturing a semiconductor device includes forming an interface layer, a nitrided gate dielectric, a gate electrode, and source drain regions. The interface layer is formed in a substrate by laser processing. The nitrided gate dielectric is formed over the interface layer by laser processing. The gate electrode is formed over the substrate and the gate dielectric after the laser processing step, and source/drain regions are formed in the substrate proximate to the gate electrode.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric;
forming a gate electrode over the substrate and the gate dielectric after the laser processing step; and
forming an interface layer in the substrate by laser processing before forming the gate dielectric,
wherein a surface of the interface layer is smoother than the surface of the substrate prior to forming the interface layer.
2. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric;
forming a gate electrode over the substrate and the gate dielectric after the laser processing step; and
forming an interface layer in the substrate by laser processing before forming the gate dielectric,
wherein the thickness of the interface layer is between about 10 and 200 angstroms.
3. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric; and
forming a gate electrode over the substrate and the gate dielectric after the laser processing step,
wherein the step of forming a nitrided gate dielectric includes forming a gate dielectric without nitrogen by plasma enhanced chemical vapor deposition, and laser thermal annealing the gate dielectric with nitrogen in a nitrogen-containing ambient.
4. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric; and
forming a gate electrode over the substrate and the gate dielectric after the laser processing step,
wherein the step of forming a nitrided gate dielectric includes forming a gate dielectric without nitrogen, and laser thermal annealing the gate dielectric with nitrogen in a nitrogen-containing ambient, and the nitrogen-containing ambient includes a gas selected from the group consisting of ammonium, nitric oxide, nitrous oxide, and combinations thereof.
5. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric; and
forming a gate electrode over the substrate and the gate dielectric after the laser processing step,
wherein the nitrided gate dielectric is formed by laser thermal oxidation in an ambient including nitrogen, and the ambient includes a gas selected from the group consisting of ammonium, nitric oxide, nitrous oxide, and combinations thereof.
6. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric; and
forming a gate electrode over the substrate and the gate dielectric after the laser processing step,
wherein the nitrided gate dielectric is formed by laser thermal oxidation in an ambient including nitrogen, and the ambient includes an oxidant selected from the group consisting of oxygen, steam, ozone, oxygen plasma, nitrous oxide, nitric oxide and combinations thereof.
7. A method of manufacturing a semiconductor device, comprising the steps of:
forming a nitrided gate dielectric over a substrate;
laser processing the gate dielectric; and
forming a gate electrode over the substrate and the gate dielectric after the laser processing step,
wherein during the laser processing step, certain portions of the semiconductor device are exposed to the laser processing step and other portions are not exposed.