Selective polymer growth for memory cell fabrication
View Patent ↗Systems and methodologies of growing an active layer (e.g., a polymer layer) for a memory cell via catalyst points of a self assembled monolayer (SAM). The self assembled monolayer can act as a site that anchors a subsequent growth of polymer chain reactions, via the presence of the DPA that reacts with the active catalyst spots. The DPA can react with a surface of the self assembled monolayer to form an active layer of the polymer memory cell.
1. A polymer memory cell comprising:
an active layer anchored via catalyst points to a self assembled monolayer, the active layer changes an impedance state based on a migration of charges therefrom, the active layer fabricated via a reaction of catalyst points with diphenylacetylene; and
a passive layer that underlies the self assembled monolayer, the passive layer facilitates supply of charges to the active layer, the passive layer and the active layer transfer charges therebetween to store data in the polymer memory cell.
2. The polymer memory cell of claim 1 , the passive layer is copper sulfide.
3. The polymer memory cell of claim 2 , the self assembled monolayer has terminal acetylene linkages.
4. The polymer memory cell of claim 1 , the active layer comprises molecular units with redox-active metals.
5. The polymer memory cell of claim 4 , the redox active metals comprise at least one of: metallocenes complex and polypyridine metal complex.
6. The polymer memory cell of claim 1 , the active layer comprises at least one of: polyphenylacetylene, polydiphenylacetylene and related derivative bearing functional groups of nitro, methyl and methoxy.
7. The polymer memory cell of claim 1 , the active layer comprises at least one of: hydrocarbons; organic molecules with donor and acceptor properties, metallo-organic complexes; porphyrin, phthalocyanine, and hexadecafluoro phthalocyanine.
8. The polymer memory cell of claim 7 , the organic molecules with donor acceptor properties comprises at least one of: N-Ethylcarbazole, tetrathiotetracene, tetrathiofulvalene, tetracyanoquinodimethane, tetracyanoethylene, cloranol, and dinitro-n phenyl.
9. The polymer memory cell of claim 7 , the metallo-organic complexes are selected from the group of bisdiphenylglyoxime, bisorthophenylenediimine, and tetraaza-tetramethylannulene.
10. The polymer memory cell of claim 1 , the active layer comprises organic material selected from the group comprising of polyacetylene, polyphenylacetylene, polydiphenylacetylene.
11. The polymer memory cell of claim 1 , the active layer comprises material selected from the group comprising of electric dipole elements, polymer ferroelectrics clusters, non-organic ferro-electrics, salts, alkalis, acids, and water molecules.
12. The polymer memory cell of claim 1 , the active layer is formed via at least one of a gas-phase reaction or CVD.
13. A method of fabricating the polymer memory cell of claim 1 , comprising;
forming the self assembled monolayer with a plurality of active catalyst points over the passive layer; and
subjecting the self assembled monolayer to a monomer to initiate sequential polymer growth from the active catalyst spots.
14. The method of claim 13 further comprising monitoring formation of polymer growth on the self assembled monolayer.
15. The method of claim 13 , the subjecting act further comprises introducing the diphenylacetylene as a gaseous medium to interact with the self assembled monolayer.
16. The method of claim 14 further comprising dividing a wafer surface to plurality of grid blocks to monitor polymer growth thereon.
17. The method of claim 16 further comprising creating a feed back loop to control polymer growth over the passive layer.
18. The method of claim 16 further comprising determining polymer growth rates of the polymer memory cell via signature comparisons.
19. A memory cell formed by a method, comprising:
depositing a passive layer over a lower conductive electrode;
exposing the passive layer to a self-assembled monolayer monomer containing a terminal acetylene unit;
forming a self-assembled monolayer with catalyst spots over the passive layer; and
re-initiating sequential polymer growth at the catalyst spots by introducing gas phase diphenylacetylene.
20. The memory cell of claim 19 , the passive layer is copper sulfide.