IP Library › Granted Patent US 7,196,373
Granted Patent B2
US 7,196,373 · App. 11/010,987 · Granted Mar 27, 2007

NAND flash memory device and method of forming a well of a NAND flash memory device

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Quick Facts
Patent No.
US 7,196,373
App. No.
11/010,987
Granted
Mar 27, 2007
Kind
B2
Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 10, 2015
From: NUMONYX B. V.
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 036319/0139 →
CHANGE OF NAME Recorded Aug 10, 2015
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 036319/0271 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2006
From: HYNIX SEMICONDUCTOR INC.
To: HYNIX SEMICONDUCTOR INC.; STMICROELECTRONICS S.R.L.
Reel/Frame 018207/0057 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 2, 2005
From: LEE, HEE YOUL
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 015650/0601 →