IP Library › Granted Patent US 7,122,483
Granted Patent B2
US 7,122,483 · App. 11/013,838 · Granted Oct 17, 2006

Gate technology for strained surface channel and strained buried channel MOSFET devices

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,122,483
App. No.
11/013,838
Granted
Oct 17, 2006
Kind
B2
Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2010
From: AMBERWAVE SYSTEMS CORPORATION
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 023848/0183 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2007
From: FITZGERALD, EUGENE A.; HAMMOND, RICHARD; CURRIE, MATTHEW
To: AMBERWAVE SYSTEMS CORPORATION
Reel/Frame 019018/0993 →