Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted device
A method of forming a buried wiring in a low-k dielectric film, includes: forming a low-k dielectric film having a dielectric constant of 3 or less on an underlayer; removing the low-k dielectric film by a first width from an edge of the underlayer; forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width; forming a groove in the cap film and the low-k dielectric film; forming a conductive film in the groove and on the cap film; removing the conductive film by a second width, different from the first width by 1 mm or more, from the edge of the underlayer; and polishing unnecessary portions of the conductive film on the cap film, after removing the conductive film by the second width.
1 . A method of forming a buried wiring in a low-k dielectric film, comprising:
forming a low-k dielectric film having a dielectric constant not exceeding 3 on an underlayer;
removing the low-k dielectric film by a first width from an edge of the underlayer;
forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width;
forming a groove in the cap film and the low-k dielectric film;
forming a conductive film in the groove and on the cap film;
removing the conductive film by a second width, different from the first width by at least 1 mm, from the edge of the underlayer; and
removing portions of the conductive film on the cap film, after removing the conductive film by the second width.
2 . The method of forming a buried wiring according to claim 1 , wherein the first width is in a range from 4 mm to 15 mm.
3 . The method of forming a buried wiring according to claim 1 , wherein the second width is smaller than the first width.
4 . A method of manufacturing a semiconductor device, comprising:
forming a semiconductor element having a diffusion region in a substrate;
forming an interlayer insulating film covering the semiconductor element;
forming a contact connected to the diffusion region in the interlayer insulating film;
forming a low-k dielectric film having a dielectric constant not exceeding 3 on the contact and the interlayer insulating film;
removing the low-k dielectric film by a first width from an edge of the substrate;
forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width;
forming a groove reaching a top surface of the contact in the cap film and the low-k dielectric film;
forming a conductive film in the groove and on the cap film;
removing the conductive film by a second widths different from the first width by at least 1 mm, from the edge of the substrate; and
removing portions of the conductive film on the cap film, after removing the conductive film.
5 . The method of manufacturing a semiconductor device according to claim 4 , wherein the first width is in a range from 4 mm to 15 mm.
6 . The method of manufacturing a semiconductor device according to claim 4 , wherein the second width is smaller than the first width.
7 . A method of manufacturing a semiconductor mounted device, comprising:
forming a low-k dielectric film having a dielectric constant not exceeding 3 on a semiconductor device having a semiconductor element;
removing the low-k dielectric film by a first width from an edge of the semiconductor device;
forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width;
forming a groove in the cap film and the low-k dielectric film;
forming a conductive film in the groove and on the cap film;
removing the conductive film by a second width, different from the first width by at least 1 mm, from the edge of the semiconductor device; and
removing portions of the conductive film on the cap film, after removing the conductive film by the second width.
8 . A multilayered wiring structure comprising:
a first low-k dielectric film on a substrate and spaced by a first width from an edge of the substrate;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive film and the first low-k dielectric film, and spaced by a second widths smaller than the first width by at least 0.7 mm, from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.
9 . A multilayered wiring structure comprising:
a first low-k dielectric film on a substrate and spaced by a first width from an edge of the substrate;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive film and the first low-k dielectric film and spaced by a second widths larger than the first width by at least 0.4 mm, from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.
10 . A semiconductor device comprising:
a semiconductor element on a substrate and having a diffusion region;
an interlayer insulating film covering the semiconductor element;
a contact in the interlayer insulating film and connected to the diffusion region;
a first low-k dielectric film on the contact and the interlayer insulating film, and spaced by a first width from an edge of the substrate;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive layer and the first low-k dielectric film, and spaced by a second width, smaller than the first width by at least 0.7 mm, from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.
11 . A semiconductor device comprising:
a semiconductor element on a substrate and having a diffusion region;
an interlayer insulating film covering the semiconductor element;
a contact in the interlayer insulating film and connected to the diffusion region;
a first low-k dielectric film on the contact and the interlayer insulating film, and spaced by a first width from an edge of the substrate;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive layer and the first low-k dielectric film, and spaced by a second width, larger than the first width by at least 0.4 mm, from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.
12 . The semiconductor device according to claim 10 , further comprising:
a third low-k dielectric film on the second low-k dielectric film and the second conductive layer, and spaced by the first width from the edge of the substrate;
a third conductive layer in a third opening in the third low-k dielectric film;
a fourth low-k dielectric film on the third low-k dielectric film and the conductive layer, and spaced by the second width from the edge of the substrate; and
a fourth conductive layer in a fourth opening in the fourth low-k dielectric film.
13 . The semiconductor device according to claim 11 , further comprising:
a third low-k dielectric film on the second low-k dielectric film and the second conductive layer, and spaced by the first width from the edge of the substrate;
a third conductive layer in a third opening in the third low-k dielectric film;
a fourth low-k dielectric film on the third low-k dielectric film and the conductive layer, and spaced by the second width from the edge of the substrate; and
a fourth conductive layer in a fourth opening in the fourth low-k dielectric film.
14 . The semiconductor device according to claim 10 , wherein the first width is different from the second width by at least 1.0 mm when the second low-k dielectric film has a Young's modulus of at least 4 GPa and a thickness of at least 600 nm.
15 . The semiconductor device according to claim 11 , wherein the first width is different from the second width by at least 1.0 mm when the second low-k dielectric film has a Young's modulus of at least 4 GPa and a thickness of at least 600 nm.
16 . The semiconductor device according to claim 10 , wherein the first width is different from the second width by at least 1.2 mm when the second low-k dielectric film has a Young's modulus of at least 2 GPa and less than 4 GPa and a thickness of at least 800 nm.
17 . The semiconductor device according to claim 11 , wherein the first width is different from the second width by at least 1.2 mm when the second low-k dielectric film has a Young's modulus of at least 2 GPa and less than 4 GPa and a thickness of at least 800 nm.
18 . A semiconductor mounted device comprising:
a semiconductor chip having a semiconductor element and an upper wiring on a substrate;
a first low-k dielectric film on the semiconductor chip and spaced by a first width from an edge of the semiconductor chip;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive film and the first low-k dielectric film, and removed by a second width smaller than the first width by at least 0.7 mm from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.
19 . A semiconductor mounted device comprising:
a semiconductor chip having a semiconductor element and an upper wiring on a substrate;
a first low-k dielectric film on the semiconductor chip and spaced by a first width from an edge of the semiconductor chip;
a first conductive layer in a first opening in the first low-k dielectric film;
a second low-k dielectric film on the first conductive film and the first low-k dielectric film, and spaced by a second width, larger than the first width by at least 0.4 mm, from the edge of the substrate; and
a second conductive layer in a second opening in the second low-k dielectric film.