Granted Patent B2

US 7,057,964 · App. 11/015,421 · Granted Jun 6, 2006

Abstract

Claims (16)

1. A semiconductor memory device comprising:

a memory core area;

a plurality of address input pads for transferring addresses;

a first address buffer part for receiving the addresses from the plurality of address input pads and outputting first addresses;

a plurality of multi I/O pads for inputting/outputting data or inputting/outputting addresses/data while multiplexing the addresses/data;

a data I/O buffer part for receiving data from the plurality of multi I/O pads and transferring the data to the memory core area or receiving and outputting addresses;

a second address buffer part for receiving the addresses from the data I/O buffer part and outputting second addresses;

an address multiplexer part for combining the first addresses and the second addresses and outputting data access addresses to the memory core area; and

a path control part for controlling the address multiplexer part to output the first addresses as the data access addresses or to output a combination of the first addresses and the second addresses as the data access addresses.

2. The semiconductor memory device as recited in claim 1 , wherein the path control part controls the data I/O buffer part to transfer the data inputted through the multi I/O pads to the memory core area, and controls the second address buffer part to output the addresses, which are inputted through the multi I/O pads, as the second addresses of the address multiplexer part.

3. The semiconductor memory device as recited in claim 2 , further comprising a mode register for controlling the path control part in response to an external control signal so as to output the first addresses as the data access addresses or combine the first addresses and the second addresses into the data access addresses.

4. The semiconductor memory device as recited in claim 1 , wherein the second address buffer part is disposed closest to the data I/O buffer part to the maximum.

5. The semiconductor memory device as recited in claim 4 , wherein the path control part controls the address multiplexer part to operate corresponding to a timing difference when the second addresses and the first addresses are inputted to the address multiplexer part.

6. The semiconductor memory device as recited in claim 1 , wherein the multiplexer part includes:

a multiplexer for selecting some addresses among the first addresses and one of the second addresses; and

a signal combiner for combining the selected signals and the remaining addresses of the first addresses.

Assignments (6)