High frequency module and manufacturing method thereof
View Patent ↗A high frequency module used as a unit circuit making up a phased array antenna, in which the module may be reduced in size with reduction in cost. A high frequency module 10 includes a dielectric substrate 1 having both surfaces metallized. The dielectric substrate has a first metallized layer 2 and a second metallized layer 3 formed on both surfaces and has a low noise amplifier and the phase shifter IC 9 mounted on the metallized layer 2 on one surface. The high frequency module 10 also includes a low noise transistor 7 and a distributed constant circuit 12 , formed on the one surface of the dielectric substrate 1 to form the low noise amplifier together, and an input terminal 5 , an output terminal 6 and power supply terminals 15 A to 15 D formed by leading out the metallized layer 2 on the one surface to the opposite side surface of the dielectric substrate 1 in such a manner as to maintain insulation from the metallized layer 3 on the opposite side surface. The high frequency module further includes a metal cap 13 provided for covering at least a circuit component loading surface of the dielectric substrate 1.
1. A high frequency module including a unit circuit at least having a low noise amplifier for amplifying high frequency signals and a phase shifter IC for adjusting the pass phase of said high frequency signals, said high frequency module comprising:
a dielectric substrate having both surfaces thereof metallized, said dielectric substrate having a metallized layer formed on each of both surfaces thereof and having said low noise amplifier and said phase shifter IC mounted on the metallized layer on one surface thereof;
a low noise transistor and a distributed constant circuit, formed on said one surface of said dielectric substrate to form said low noise amplifier together;
an input terminal, an output terminal and a power supply terminal formed by leading out the metallized layer on said one surface to the opposite side surface of said dielectric substrate by a through-hole in such a manner as to maintain insulation from the metallized layer on said opposite side surface; and
a protective material provided for covering at least a circuit component loading surface of said dielectric substrate.
2. The high frequency module as defined in claim 1 wherein at least one of said low-noise transistor and the phase-shifter IC is a package or a bare chip.
3. The high frequency module as defined in claim 1 wherein said protective material is molded resin.
4. The high frequency module as defined in claim 1 wherein said protective material is a metal cap.
5. The high frequency module as defined in claim 1 wherein said dielectric substrate is formed of a dielectric material having a high dielectric constant.
6. A method for manufacturing a high frequency module including a unit circuit at least having a low noise amplifier for amplifying high frequency signals and a phase shifter IC for adjusting the pass phase of said high frequency signals, said method comprising:
a step of providing a dielectric substrate having both surfaces thereof metallized, said dielectric substrate having metallized layers on both surfaces thereof, and having a distributed constant circuit, as a component of said low noise amplifier, formed in a portion of the metallized layer on one surface; the metallized layer on said one surface being led out by a through-hole to the opposite side surface of said dielectric substrate in a manner of being insulated from the metallized layer of said opposite side surface, to form an input terminal, an output terminal and a power supply terminal;
a mounting step of mounting said phase shifter IC along with a low noise transistor at least as a component of said low noise amplifier on said one surface of said dielectric substrate; and
a sealing step of sealing said one surface of said dielectric substrate.
7. The method for manufacturing a high frequency module as defined in claim 6 wherein
at least one of said low noise transistor and said phase shifter IC is a package; and wherein
said mounting step mounts said low noise transistor or said phase shifter IC to said dielectric substrate by soldering, gluing or brazing.
8. The method for manufacturing a high frequency module as defined in claim 6 wherein
at least one of said low noise transistor and said phase shifter IC is a bare chip; and wherein
said mounting step includes a first step of mounting said low noise transistor or said phase shifter IC to said dielectric substrate, and a second step of carrying out wire bonding between said low noise transistor or said phase shifter IC, and said metallized layer.
9. The method for manufacturing a high frequency module as defined in claim 6 wherein sealing in said sealing step is by resin molding.
10. The method for manufacturing a high frequency module as defined in claim 6 wherein sealing in said sealing step is by a metal cap.
11. A high frequency module including a unit circuit at least having a low noise amplifier for amplifying high frequency signals and a phase shifter IC for adjusting the pass phase of said high frequency signals, said high frequency module comprising:
a dielectric substrate having both surfaces thereof metallized, said dielectric substrate having a metallized layer formed on each of both surfaces thereof and having said low noise amplifier and said phase shifter IC mounted on the metallized layer on one surface thereof;
a low noise transistor and a distributed constant circuit, formed on said one surface of said dielectric substrate to form said low noise amplifier together;
an input terminal, an output terminal and a power supply terminal formed by leading out the metallized layer on said one surface to the opposite side surface of said dielectric substrate in such a manner as to maintain insulation from the metallized layer on said opposite side surface; and
a protective material provided for covering at least a circuit component loading surface of said dielectric substrate.