Semiconductor device including a hard sheet to reduce warping of a base plate and method of fabricating the same

1. A semiconductor device comprising:

a base plate having a flat upper surface;

a semiconductor constituent body which is formed on the flat upper surface of the base plate and which includes a semiconductor substrate and a plurality of external connecting electrodes formed on the semiconductor substrate;

an insulating layer which has an upper surface and a thickness, and which is formed on the flat upper surface of the base plate around a peripheral side surface of the semiconductor constituent body;

a hard sheet, which has a thickness that is substantially the same as a thickness of the base plate and that is smaller than the thickness of the insulating layer, and which is buried in the upper surface of the insulating layer such that an upper surface of the hard sheet is substantially level with an upper surface of the semiconductor constituent body and with the upper surface of the insulating layer;

an upper insulating film formed on the semiconductor constituent body and on the hard sheet and provided with a hole; and

an interconnection formed on the upper insulating film and connected to at least one of the external connecting electrodes of the semiconductor constituent body through the hole.

2. A semiconductor device according to claim 1 , wherein the hard sheet is made of substantially the same material as the base plate.

3. A semiconductor device according to claim 1 , wherein the base plate and hard sheet are made of a material containing at least a thermosetting resin.

4. A semiconductor device according to claim 3 , wherein each of the base plate and hard sheet is formed of a substrate including an inorganic material.

5. A semiconductor device according to claim 1 , wherein the hard sheet is made of the same material as the insulating layer.

6. A semiconductor device according to claim 1 , wherein the hard sheet is made of a material having substantially the same thermal expansion coefficient as the base plate.

7. A semiconductor device according to claim 1 , wherein one of the base plate and hard sheet is made of a metal sheet, and the other is made of a material containing at least a thermosetting resin.

8. A semiconductor device according to claim 7 , wherein the metal sheet is made of a material selected from the group consisting of copper and stainless steel.

9. A semiconductor device according to claim 1 , further comprising another hard sheet which is made of the same material as the hard sheet and which is provided in the insulating layer.

10. A semiconductor device according to claim 1 , further comprising a lower insulating film which is made of substantially the same material as the upper insulating film and which is formed below the base plate.

11. A semiconductor device according to claim 1 , further comprising:

an uppermost insulating film which is formed on the upper insulating film and the interconnection and which covers a portion except for a connecting pad portion of the interconnection; and

a lowermost insulating film which is formed on a lowermost surface of the base plate and which is made of substantially the same material as the uppermost insulating film.

12. A semiconductor device according to claim 11 , wherein the uppermost insulating film and the lowermost insulating film are formed of a solder resist.

13. A semiconductor device according to claim 11 , wherein a solder ball is formed on the connecting pad portion of the interconnection.

14. A semiconductor device according to claim 1 , wherein one of a ground layer and a power supply layer made of a solid pattern is formed on at least an upper surface of the hard sheet so as to be connected to the interconnection.

15. A semiconductor device according to claim 14 , wherein the ground layer is formed on at least the upper surface of the hard sheet, and the ground layer and the interconnection form a microstrip line structure.

16. A semiconductor device according to claim 1 , further comprising a heat-radiating layer formed on at least one surface of the base plate.

17. A semiconductor device according to claim 1 , wherein the external connecting electrodes have a substantially columnar shape, and the semiconductor constituent body includes an encapsulating film disposed among the external connecting electrodes on an upper surface side of the semiconductor substrate.

18. A semiconductor device comprising:

a base plate having a flat upper surface and a lower surface;

a lower insulating film formed on the lower surface of the base plate;

a semiconductor constituent body which is formed on the flat upper surface of the base plate and which includes a semiconductor substrate and a plurality of external connecting electrodes formed on the semiconductor substrate;

an insulating layer which has an upper surface and a thickness, and which is formed on the flat upper surface of the base plate around a peripheral side surface of the semiconductor constituent body;

a hard sheet, which has a thickness that is substantially the same as a thickness of the base plate and that is smaller than the thickness of the insulating layer, and which is buried in the upper surface of the insulating layer such that an upper surface of the hard sheet is substantially level with an upper surface of the semiconductor constituent body;

an upper insulating film, which is formed on the semiconductor constituent body and the hard sheet, and which has a thermal expansion coefficient that is substantially the same as a thermal expansion coefficient of the lower insulating film; and

an interconnection formed on the upper insulating film, such that the interconnection does not contact the hard sheet, and connected to at least one of the external connecting electrodes of the semiconductor constituent body.