Method for forming passivation film of semiconductor device and structure of passivation film of semiconductor device
View Patent ↗Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.
1. A method of forming a passivation film of a semiconductor device, comprising the steps of:
forming metal wires on a semiconductor substrate;
forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma;
forming a high density plasma (HDP) film being a second passivation film on the buffer oxide film; and
forming a third passivation film comprising a silicon nitride film on the second passivation film.
2. The method of claim 1 , comprising forming the buffer oxide film by applying a bias power or by applying a bias power lower than 1000 W through chemical reaction in a state where ions of a plasma state do not physically collide against the semiconductor substrate.
3. The method of claim 1 , comprising forming the buffer oxide film as a silicon oxide film by using a silane (SiH 4 ) gas as a silicon source gas and oxygen (O 2 ) as an oxygen source gas.
4. The method of claim 1 , comprising forming the buffer oxide film by implanting a silicon source gas and an oxygen source gas and applying a source power of 1000 W to 5000 W and a bias power of0 W to 1000 W at a temperature of 250° C. to 400° C. and a pressure of 1 mTorr to 15 mTorr.
5. The method of claim 4 , wherein the silicon source gas is a silane gas and the oxygen source gas is an oxygen gas, and comprising forming the buffer oxide film by implanting the silicon source gas at a flow rate of 10 sccm to 100 sccm and the oxygen source gas at a flow rate of 15 sccm to 200 sccm.
6. The method of claim 1 , comprising forming the buffer oxide film to a thickness of about 50 Å to 2000 Å, which is a thickness of a degree that can sufficiently prevent a plasma charge from infiltrating into the metal wire when the HDP film is formed.
7. The method of claim 1 , comprising forming the HDP film by implanting a silane gas and an oxygen gas and applying a source power of 1000 W to 5000 W and a bias power of 1000 W to 4000 W at a temperature of 250° C. to 400° C. and a pressure of 1 mTorr to 15 mTorr.
8. The method of claim 7 , comprising forming the HDP film by implanting the silane gas at a flow rate of 30 sccm to 150 sccm and the oxygen gas at the flow rate of 40 sccm to 300 sccm.
9. The method of claim 1 , comprising forming the silicon the nitride film by means of a PECVD method, and comprising implanting a silicon source gas and a nitrogen source gas and applying a high frequency power of 300 W to 2000 W at a temperature of 300° C. to 400° C. and a pressure of 1 mTorr to 15 mTorr.
10. The method of claim 1 , comprising forming the buffer oxide film and the HDP film in-situ in the same chamber.