IP Library Granted Patent US 7,250,809
Granted Patent B2
US 7,250,809 · App. 11/019,394 · Granted Jul 31, 2007

Boosted voltage generator

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Quick Facts
Patent No.
US 7,250,809
App. No.
11/019,394
Granted
Jul 31, 2007
Kind
B2
Abstract

The present invention provides a boosted voltage generator of a semiconductor device where a boosted voltage efficiency and drivability at a target boosted voltage level can be evaluated accurately by employing an enable signal generator. The boosted voltage generator includes a boosted voltage pad; a level detection means for detecting whether or not a present boosted voltage reaches a target boosted voltage level; an oscillation means for performing an oscillation mode in response to a signal outputted from the level detection means; a charge pumping means for outputting a level-controlled boosted voltage in response to a signal outputted from the oscillation means; and an enable signal generation means for operating the oscillation means in response to a signal outputted from the level detection means.

Claims (20)

1. A boosted voltage generator comprising:

a level detection means for detecting whether or not a present boosted voltage reaches a target boosted voltage level;

an oscillation means for performing an oscillation mode in response to a signal outputted from the level detection means;

a charge pumping means for outputting a level-controlled boosted voltage in response to a signal outputted from the oscillation means;

an enable signal generation means for operating the level detection means in response to a test mode boosted voltage rising signal and a test mode boosted voltage falling signal;

a first fuse for modulating an oscillation period of the oscillation means according to a comparison result between measured and simulated efficiencies; and

a second fuse for modulating a pumping intensity of the charge pumping means according to the comparison result.

2. The boosted voltage generator as recited in claim 1 , wherein, in a test mode, the test mode boosted voltage rising signal is used for raising a level of the level-controlled boosted voltage to a predetermined level and the test mode boosted falling signal is used for lowering the level of the level-controlled boosted voltage to a predetermined level.

3. The boosted voltage generator as recited in claim 2 , wherein a target boosted voltage is applied to a boosted voltage pad from a test apparatus in a test mode.

4. The boosted voltage generator as recited in claim 3 , wherein the enable signal generation means includes a NAND gate where the test mode boosted voltage rising signal and the test mode boosted falling signal are inputted.

5. The boosted voltage generator as recited in claim 1 , wherein a target boosted voltage is applied to the boosted voltage pad from a test apparatus in the test mode.

6. The boosted voltage generator as recited in claim 5 , wherein the enable signal generation means includes a NAND gate where the test mode boosted voltage rising signal and the test mode boosted falling signal are inputted.

7. The boosted voltage generator as recited in claim 1 , wherein the oscillation means includes a ring oscillator.

8. A boosted voltage generator comprising:

a level detector arranged to generate a signal indicative of a present boosted voltage reaching a target boosted voltage level;

an oscillator arranged to perform an oscillation mode responsive to the level detector signal;

a charge pump arranged to generate a level-controlled boosted voltage responsive to a signal from the oscillator;

an enable signal generator arranged to transmit a signal to the level detector responsive to a test mode boosted voltage rising signal and a test mode boosted voltage falling signal;

an oscillator fuse arranged to modulate an oscillation period of the oscillator, wherein the oscillator fuse is further arranged to be modified based on a comparison result between a measured and a simulated efficiency; and

a charge pump fuse arranged to modulate a pumping intensity of the charge pump, wherein the charge pump fuse is further arranged to be modified based on the comparison result.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →