CMOS image sensor
View Patent ↗A CMOS image sensor is disclosed, to improve light-condensing efficiency by forming a minute lens array having a large curvature (long focal distance) for the increase in height of upper structures above a photodiode, which includes a lower layer formed of the photodiode, metal circuits, and insulating interlayers for insulating the metal circuits from one another; a color filter array of R, G and B formed on the lower layer; an overcoat layer formed on the color filter array; a micro-lens formed on the overcoat layer; and the minute lens array having minute lenses formed between the lower layer and the color filter array, each minute lens having a larger curvature than that of the micro-lens.
1. A CMOS image sensor comprising:
a lower layer formed of a photodiode, metal circuits, and insulating interlayers for insulating the metal circuits from one another;
a color filter array of R, G, and B formed on the lower layer;
an overcoat layer formed on the color filter array;
a micro-lens formed on the overcoat layer;
a minute lens array having a plurality of minute lenses, on the photodiode, formed between the lower layer and the color filter array, each minute lens having a larger curvature than that of the micro-lens
a protective layer formed between the lower layer and the color filter array, so as to protect the photodiode and the metal circuits; and
a first planarization layer formed on the protective layer, to have the minute lens array thereon.
2. The CMOS image sensor of claim 1 , further comprising a second planarization layer to cover the minute lens array.