CMOS image sensor and method for fabricating the same
View Patent ↗A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, forming a first conductive type heavily doped impurity ion region in the semiconductor substrate at both sides of the trench, forming a device isolation film by interposing an insulating film between the trench and the device isolation, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive type impurity ion region for a photodiode in the semiconductor substrate between the gate electrode and the device isolation film.
1. A method for fabricating a CMOS image sensor comprising:
forming a trench in a field region of a first conductive type semiconductor substrate having a first conductive type low concentration epitaxial layer; forming a first conductive type heavily doped impurity ion regions in the first conductive type low concentration epitaxial layer, at sidewalls of the trench by implanting first conductive type heavily doped impurity ions into both sides of the trench at a predetermined tilt angle θ against the substrate, the tilt angle θ being chosen such that the first conductive type heavily doped impurity ions are not implanted into a bottom of the trench, wherein the tilt angle θ depends on tan θ=W/(H 1 +H 2 ), with W representing a width of the trench at a top surface of the trench, H 1 representing a height of a sacrificial layer formed on the substrate, and H 2 representing a depth of the trench; forming a first insulating film in the trench such that the first insulating film covers the first conductive type impurity ion regions; forming a device isolation film by depositing a second insulating film in the trench; sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate; and forming a second conductive type impurity ion region for a photodiode at a predetermined portion of an active region in the first conductive type low concentration epitaxial layer.
2. The method of claim 1 , wherein the step of forming a trench includes sequentially depositing the sacrificial layer comprising a sacrificing oxide film and a hard mask layer on the epitaxial layer, forming an opening of the sacrificing oxide film and the hard mask layer in said field region of the semiconductor substrate to expose the surface of the epitaxial layer in the opening, and forming the trench in the exposed epitaxial layer using the hard mask layer as an etching mask.
3. The method of claim 1 , wherein at least one of the first conductive type heavily doped impurity ion regions has a width between 100Å and 300Å.
4. The method of claim 1 , wherein the first conductive type impurity ions are either B ions or BF 2 ions.
5. The method of claim 1 , wherein at least one of the first conductive type heavily doped impurity ion regions is formed by ion implantation at the concentration of 1E12 to 1E15 ions/cm 2 .
6. The method of claim 1 , wherein forming the first insulating film comprises growing a thermal oxide film on the semiconductor substrate in the trench by a thermal oxidation process.