Opto-electronic memory element on the basis of organic metalloporphyrin molecules
View Patent ↗A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.
1. A memory cell for opto-electronic applications, comprising:
a substrate;
a first electrode and a second electrode; and
an active layer disposed between the first and the second electrodes, wherein the active layer includes a Zn-porphyrin derivative, and wherein the second electrode is transparent and comprises ZnO doped with one of the elements selected from the group consisting of boron, aluminum, gallium, and magnesium;
wherein the memory cell is disposed in a memory element comprising a memory cell field, and the memory cell field is formed as a cross point array.
2. The memory cell according to claim 1 , wherein the dopant concentration is in the range of about 1-1.5 Atom %.
3. The memory cell according to claim 1 , wherein the substrate comprises a polymer.
4. The memory cell according to claim 1 , wherein the first electrode comprises polysilicon, Si/SiO2 or Au.
5. The memory cell according to claim 1 , wherein the memory cell is arranged in a memory element comprising a memory cell field, and the memory cell is in the via contact hole between the first and second electrodes.
6. The memory cell according to claim 1 , wherein the second transparent electrode is deposited by an MOCVD method.
7. The memory cell according to claim 6 , wherein a precursor for zinc used in the MOCVD-process is diethyl zinc, which is used in the presence of H 2 O.
8. The memory cell according to claim 1 , whereas diboran is used as a boron source during the manufacturing of the second transparent electrode.
9. The memory cell according to claim 1 , wherein trimethylaluminum is used as an aluminum source during the manufacturing of the second transparent electrode.
10. The memory cell according to claim 1 , wherein trimethyl gallium is used as a gallium source during the manufacturing of the second transparent electrode.
11. The memory cell according to claim 6 , wherein the MOCVD procedure is carried out at a pressure of about 0.5 mbar.
12. The memory cell according to claim 6 , wherein the MOCVD procedure is carried out at a temperature of about 180° C.
13. The memory cell according to claim 1 , wherein the cell is manufactured by a roll-to-roll procedure.
14. A memory cell for opto-electronic applications, comprising:
a substrate;
a first electrode and a second electrode; and
an active layer disposed between the first and the second electrodes, wherein the active layer includes a Zn-porphyrin derivative, and wherein the second electrode is transparent and comprises ZnO doped with one of the elements selected from the group consisting of boron, aluminum, gallium, and magnesium;
wherein the memory cell is arranged in a memory element comprising a memory cell field, and the memory cell is in the via contact hole between the first and second electrodes.