Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE—(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
1. A structure, comprising:
a rare earth semiconductor layer comprising oxygen, nitrogen or phosphorus that is single crystalline; a rare-earth template layer that is single crystalline; and
one or more layers comprising at least one of a rare-earth compound that is single crystalline and a semiconductor that is single crystalline, such that the rare earth semiconductor layer comprising oxygen, nitrogen or phosphorus is deposited on the template layer and the one or more layers comprising at least one of a rare-earth compound and a semiconductor is deposited on the rare earth semiconductor layer comprising oxygen, nitrogen or phosphorus.
2. The structure of claim 1 , further comprising:
a layer of at least one of silicon, germanium and silicon germanium formed over said template layer before said rare earth semiconductor layer comprising oxygen, nitrogen or phosphorus.