Patent Assignment
Reel/Frame 046329/0511
Assignment of Assignor's Interest
Recorded: 2018-06-07
Pages: 22
Assignor
TRANSLUCENT INC.
Executed: 2018-04-13
Assignee
IQE PLC
PASCAL CLOSE, ST. MELLONS, CARDIFF, CF3 0LM, UNITED KINGDOM
Covered Properties
(77)
Devices with Optical Gain in Silicon
Devices with Optical Gain in Silicon
Devices with Optical Gain in Silicon
Method and Apparatus for Growth of Single-Crystal Rare-Earth Oxides, Nitrides, and Phosphides
Patent:
7,135,699 →
Application:
10/746,957 →
Rare Earth-Oxides, Rare Earth-Nitrides, Rare Earth-Phosphides and Ternary Alloys with Silicon
Devices with Optical Gain in Silicon
Semiconductor-On-Insulator Silicon Wafer
Patent:
7,217,636 →
Application:
11/054,579 →
Silicon-On-Insulator Semiconductor Wafer
Patent:
7,253,080 →
Application:
11/053,775 →
Rare Earth-Oxides, Rare Earth-Nitrides, Rare Earth-Phosphides and Ternary Alloys with Silicon
Signal and/or Ground Planes with Double Buried Insulator Layers and Fabrication Process
Rare Earth-Oxides, Rare Earth -Nitrides, Rare Earth -Phosphides and Ternary Alloys with Silicon
Ic on Non-Semiconductor Substrate
Patent:
7,355,269 →
Application:
11/398,910 →
Double Gate Fet and Fabrication Process
Strain Inducing Multi-Layer Cap
Method of Forming a Rare-Earth Dielectric Layer
Selective Colored Light Emitting Diode
Patent:
7,388,230 →
Application:
11/257,597 →
Silicon-On-Insulator Semiconductor Wafer
Fet Gate Structure and Fabrication Process
Patent:
7,432,569 →
Application:
11/068,222 →
Transistor and in-Situ Fabrication Process
Patent:
7,498,229 →
Application:
11/053,785 →
Signal and/or Ground Planes with Double Buried Insulator Layers and Fabrication Process
Semiconductor-On-Insulator Silicon Wafer
Full Color Display Including Leds with Rare Earth Active Areas and Different Radiative Transistions
Patent:
7,605,531 →
Application:
11/257,517 →
Rare Earth-Oxides, Rare Earth Nitrides, Rare Earth Phosphides and Ternary Alloys with Silicon
Double Gate Fet and Fabrication Process
Composition Comprising Rare-Earth Dielectric
Multi-Gate Field Effect Transistor
Rare Earth-Oxides, Rare Earth-Nitrides, Rare Earth-Phosphies, and Ternary Alloys with Silicon
Thermoelectric and Pyroelectric Energy Conversion Devices
Multilayered Box in Fdsoi Mosfets
Transistor and in-Situ Fabrication Process
Double Gate Fet and Fabrication Process
Rare Earth-Oxides, Rare Earth -Nitrides, Rare Earth -Phosphides and Ternary Alloys with Silicon
Thin Film Solar Cell
Full Color Display
Stacked Transistors and Process
Photovoltaic Up Conversion and Down Conversion Using Rare Earths
Passive Rare Earth Tandem Solar Cell
Active Rare Earth Tandem Solar Cell
Multijunction Rare Earth Solar Cell
Thin Film Semi-Conductor-on-Glass Solar Cell Devices
Semiconductor Structures with Rare-Earths
Monolithicallly Integrated Ir Imaging Using Rare-Earth Up Conversion Materials
Spontaneous/Stimulated Light Emitting ¿-Cavity Device
Integrated Rare Earth Devices
Single-Crystal Reo Buffer on Amorphous Siox
Patent:
8,394,194 →
Application:
13/495,215 →
Ge Quantum Dots for Dislocation Engineering of Iii-N on Silicon
Modification of Reo by Subsequent Iii-N Epi Process
Patent:
8,501,635 →
Application:
13/631,906 →
Earth Abundant Photonic Structures
Patent:
8,542,437 →
Application:
12/932,979 →
Integrated Rare Earth Devices
Intergrated Pump Laser and Rare Earth Waveguide Amplifier
Silicon, Aluminum Oxide, Aluminum Nitride Template for Optoelectronic and Power Devices
Patent:
8,623,747 →
Application:
13/717,182 →
Aln Inter-Layers in Iii-N Material Grown on Reo/Silicon Substrate
Patent:
8,633,569 →
Application:
13/742,590 →
Oxygen Engineered Single-Crystal Reo Template
Solar Cells with Engineered Spectral Conversion
Ir Sensor Using Reo Up-Conversion
RE-SILICIDE GATE ELECTRODE FOR III-N DEVICE ON Si SUBSTRATE
Patent:
8,748,900 →
Application:
13/851,219 →
Laser Cooling of Modified Soi Wafer
STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER
Patent:
8,796,121 →
Application:
14/083,672 →
Iii-N Material Grown on Alo/Aln Buffer on Si Substrate
REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM
Gan on Si(100) Substrate Using Epi-Twist
Patent:
8,846,504 →
Application:
14/075,032 →
Aln Cap Grown on Gan/Reo/Silicon Substrate Structure
REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
METHOD OF FABRICATING A GERMANIUM TEMPLATE ON A SILICON SUBSTRATE INCLUDING EPITAXIALLY GROWING A GeSn LAYER ON THE SILICON SUBSTRATE.
III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE
Rare Earth Oxy-Nitride Buffered Iii-N on Silicon
REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si SUBSTRATE
III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE
Patent:
9,142,406 →
Application:
14/269,011 →
Iii-N Material Grown on Ren Epitaxial Buffer on Si Substrate
Radiation Detector and Fabrication Process
Heterostructure with Carrier Concentration Enhanced by Single Crystal Reo Induced Strains
Strain Compensated Reo Buffer for Iii-N on Silicon
A METHOD OF GROWING III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
Nucleation of Iii-N on Reo Templates
STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 28, 2001
From: ATANACKOVIC, PETAR B.; MARSHALL, LARRY R.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 012341/0222 →
Assignment of Assignor's Interest
Sep 17, 2003
From: ATANACKOVIC, PETER B.; MARSHALL, LARRY R.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 014533/0415 →
Assignment of Assignor's Interest
Dec 23, 2003
From: ATANACKOVIC, PETAR B.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 014856/0401 →
Assignment of Assignor's Interest
Apr 5, 2005
From: ATANACKOVIC, PETER B.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 016454/0630 →
Assignment of Assignor's Interest
Apr 5, 2005
From: ATANACKOVIC, PETER B.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 016449/0289 →
Change of Name
Apr 6, 2005
From: TRANSLUCENT PHOTONICS, INC.
To: TRANSLUCENT, INC.
Reel/Frame 015861/0685 →
Assignment of Assignor's Interest
Apr 11, 2005
From: ATANACKOVIC, PETER B.
To: TRANSLUCENT PHOTONICS, INC.
Reel/Frame 016457/0007 →
Assignment of Assignor's Interest
Jul 28, 2005
From: ATANACKOVIC, PETAR B.
To: TRANSLUCENT INC.
Reel/Frame 016817/0320 →
Assignment of Assignor's Interest
Aug 29, 2005
From: LEBBY, MICHAEL
To: TRANSLUCENT INC.
Reel/Frame 016925/0669 →
Assignment of Assignor's Interest
Dec 1, 2005
From: ATANACKOVIC, PETAR
To: TRANSLUCENT, INC.
Reel/Frame 016837/0677 →
Corrected Recordation Form Coversheet Reel/Frame 016925/0669
Jan 24, 2006
From: ATANACKOVIC, PETAR B.; LEBBY, MICHAEL
To: TRANSLUCENT INC.
Reel/Frame 017489/0166 →
Assignment of Assignor's Interest
Aug 7, 2006
From: ATANACKOVIC, PETAR B.; LEBBY, MICHAEL
To: TRANSLUCENT INC.
Reel/Frame 018133/0171 →
Assignment of Assignor's Interest
Jan 23, 2007
From: ATANACKOVIC, PETAR B.; LEBBY, MICHAEL
To: TRANSLUCENT INC.
Reel/Frame 018807/0730 →
Assignment of Assignor's Interest
Jul 24, 2008
From: ATANACKOVIC, PETAR B.
To: TRANSLUCENT INC.
Reel/Frame 021288/0988 →
Assignment of Assignor's Interest
Feb 23, 2016
From: LEBBY, MICHAEL; SABNIS, VIJIT; ATANACKOVIC, PETAR B.
To: TRANSLUCENT, INC.
Reel/Frame 037793/0584 →