Multilayered BOX in FDSOI MOSFETS
View Patent ↗A fully depleted MOSFET has a semiconductor-on-insulator substrate that includes a substrate material, a BOX positioned on the substrate material, and an active layer positioned on the BOX. The BOX includes a first layer of material with a first dielectric constant and a first thickness and a second layer of material having a second dielectric constant different than the first dielectric constant and a second thickness different than the first thickness. The first layer of material is positioned adjacent the substrate material and the second layer of material is positioned adjacent the active layer. Drain and source regions are formed in the active layer so as to be fully depleted. The drain and source regions are separated by a channel region in the active layer. A gate insulating layer overlies the channel region and a gate stack is positioned on the gate insulating region. It is anticipated that the structure is most useful for channel regions less than 90 nm long.
1. A fully depleted MOSFET comprising:
an SOI structure including a single crystal substrate material, a BOX positioned on the substrate material, and a single crystal active layer epitaxially grown on the BOX;
the BOX including a first insulating layer of single crystal rare earth insulator material with a first dielectric constant and a first thickness and a second insulating layer having a second dielectric constant different than the first dielectric constant and a second thickness different than the first thickness;
drain and source regions formed in the single crystal active layer so as to be separated by a fully depleted channel region in the single crystal active layer; and
a gate insulating layer overlying the channel region and a gate stack positioned on the gate insulating layer,
wherein the second insulating layer is formed between the first insulating layer and the single crystal active layer after the epitaxial growth of the single crystal active layer, and the second insulating layer comprises at least silicon and oxygen; and
wherein the first insulating layer is derived from a single crystal layer formed of a rare earth oxide material ReO x , which, before the epitaxial growth of the single crystal active layer, comprises an oxygen concentration gradient with at least one region along the thickness direction having a peak oxygen concentration with x being:
1.5<x≦2.5.
2. A fully depleted MOSFET as claimed in claim 1 wherein the channel region is less than 90 nm long.
3. A fully depleted MOSFET as claimed in claim 1 wherein the first dielectric constant is higher than the second dielectric constant.
4. A fully depleted MOSFET as claimed in claim 3 wherein the thickness of the first layer of material is greater than the thickness of the second layer of material.
5. A fully depleted MOSFET as claimed in claim 1 wherein the single crystal substrate material includes silicon.