Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
1. A device comprising a thin film layer structure comprising:
a first layer consisting substantially of a rare earth, oxygen and at least one element chosen from a group consisting of silicon, germanium and carbon;
a second layer consisting substantially of at least one rare earth and at least one element chosen from a group consisting of oxygen, nitrogen and phosphorous; and
a third layer consisting substantially of a rare earth, oxygen and at least one element chosen from a group consisting of silicon, germanium and carbon; wherein the second layer is in contact with and separates the first layer from the third layer.
2. The device of claim 1 wherein said second layer consists substantially of at least one rare earth and at least one element chosen from a group consisting of oxygen, nitrogen and phosphorous and at least one element chosen from a group consisting of silicon, germanium and carbon.
3. The device of claim 1 further comprising fourth and fifth layers consisting substantially of at least one element chosen from a group consisting of silicon, germanium and carbon; wherein the first layer separates the fourth layer from the second layer and the third layer separates the fifth layer from the second layer.
4. The device of claim 1 wherein the composition of the first layer in proximity to the second layer is different from the composition of the first layer not in proximity with the first layer.
5. The device of claim 1 wherein the composition of the third layer in proximity to the second layer is different from the composition of the third layer not in proximity with the second layer.
6. The device of claim 1 wherein the composition of the second layer in proximity to the first layer is different from the composition of the second layer in proximity with the third layer.
7. The device of claim 1 wherein the second layer comprises a first region and a second region such that the composition of the first region is different than the composition of the second region.
8. The device of claim 2 further comprising fourth and fifth layers consisting substantially of at least one element chosen from a group consisting of silicon, germanium and carbon; wherein the first layer separates the fourth layer from the second layer and the third layer separates the fifth layer from the second layer.