Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE—(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
1. A semiconductor-on-insulator structure comprising:
a substrate layer comprising a first surface;
a single crystal semiconductor layer; and
an insulator layer interposed between the substrate layer and the semiconductor layer, the insulator layer comprising first and second component layers wherein each component layer comprises at least one material combination chosen from:
[Q] or [Q][RE] or [RE][J]
wherein [RE] is chosen from a group consisting of Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb) and Lutetium (Lu); [Q] is chosen from a group consisting of silicon, germanium and SiGe mixtures; [J] is chosen from a group consisting of Oxygen (O), and Nitrogen (N) such that the insulating layer is at least 90% single crystal and at least one component layer comprises a rare earth wherein the first component layer is in contact with the first surface and is polycrystalline or single crystal.
2. The structure of claim 1 , wherein atoms of the rare-earth, [RE] are bonded in the triply ionized (3+) state.
3. The structure of claim 1 , wherein the insulator layer is grown on a substrate made from at least one of, silicon, germanium, silicon germanium, GaAs, InP, SiC and Al 2 O 3 .
4. The structure of claim 1 wherein said single crystal semiconductor layer is at least one of silicon, germanium and silicon germanium formed over the insulator layer.
5. The structure of claim 1 wherein at least one of said one or more component layers further comprises at least one constituent chosen from a group comprising a crystal growth modifier and an iso-electronic center; wherein the crystal growth modifier is chosen from a group comprising C, As, P, B, H, O, N, Sn and Pb and the iso-electronic center is chosen from a group comprising oxygen and nitrogen.