IP Library Granted Patent US 9,360,565
Granted Patent B2
US 9,360,565 · App. 12/779,355 · Granted Jun 7, 2016

Radiation detector and fabrication process

Inventors: Andrew Clark (Palo Alto, CA); David L. Williams (Menlo Park, CA)
Assignee: Translucent, Inc.
G01T1/202G01T1/2018
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Quick Facts
Patent No.
US 9,360,565
App. No.
12/779,355
Granted
Jun 7, 2016
Kind
B2
Abstract

A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween.

Claims (15)

1. A monolithic integrated radiation detector comprising:

a substrate of single crystal semiconductor material;

a photodetector.of a single crystal material formed on and crystal lattice matched to the substrate; and

a scintillator of single crystal material formed on and crystal lattice matched to the photodetector.

2. A monolithic integrated radiation detector as claimed in claim 1 wherein the photodetector includes one of a solar cell, a pin photodiode, an avalanche photodiode, or a charge coupled device.

3. A monolithic integrated radiation detector as claimed in claim 1 wherein the photodetector is a silicon photodetector.

4. A monolithic integrated radiation detector as claimed in claim 1 wherein the scintillator includes a single crystal rare earth phosphor.

5. A monolithic integrated radiation detector as claimed in claim 1 wherein the photodetector and scintillator of the radiation detector are tailored to be more sensitive to one of neutrons or X-rays/gamma rays.

6. A monolithic integrated radiation detector comprising:

a substrate of single crystal semiconductor material;

a silicon photodetector of single crystal material formed on and crystal lattice matched to the substrate, the silicon photodetector including one of a solar cell, a pin photodiode, an avalanche photodiode, or a charge coupled device, the silicon photodetector including a radiation input surface; and

a transition layer including single crystal silicon and single crystal rare earth oxide formed on and crystal lattice matched to the radiation input surface of the silicon photodetector;

a scintillator including a single crystal rare earth phosphor; and

the scintillator formed on and crystal lattice matched to the radiation input surface of the photodetector .

7. A monolithic integrated radiation detector as claimed in claim 6 wherein the photodetector and scintillator of the radiation detector are tailored to be more sensitive to one of neutrons or X-rays/gamma rays.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2018
From: TRANSLUCENT INC.
To: IQE PLC
Reel/Frame 046329/0511 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 12, 2013
From: CLARK, ANDREW; WILLIAMS, DAVID L.
To: TRANSLUCENT, INC.
Reel/Frame 030987/0760 →
Continuity (1)
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