Integrated pump laser and rare earth waveguide amplifier
A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.
1. A light amplifier comprising:
a rare earth oxide, light amplifying gain medium formed into a light waveguide with a light input surface;
a pump laser having a light output surface;
a lattice matching virtual substrate having first and second opposed surfaces, the first opposed surface being substantially crystal lattice matched to the rare earth oxide light amplifying gain medium and the second opposed surface being substantially crystal lattice matched to the pump laser, the pump laser being further positioned with the light output surface adjacent the light input surface of the gain medium so as to introduce pump energy into the light waveguide; and
the lattice matching virtual substrate including a first layer of single crystal rare earth oxide material with a crystal structure and spacing substantially the same as the crystal structure and spacing of the rare earth oxide light amplifying gain medium and a second layer of single crystal rare earth oxide material with a crystal structure and spacing substantially the same as the crystal structure and spacing of an adjacent surface of the pump laser.
2. A light amplifier as claimed in claim 1 wherein the rare earth oxide, light amplifying gain medium is deposited on a single crystal semiconductor substrate.
3. A light amplifier as claimed in claim 2 wherein the semiconductor substrate includes silicon.
4. A light amplifier as claimed in claim 3 further including control and monitoring electronics fabricated on the silicon substrate and in electrical communication with the pump laser.
5. A light amplifier as claimed in claim 1 wherein the rare earth oxide, light amplifying gain medium includes Erbium oxide.
6. A light amplifier as claimed in claim 1 wherein the pump laser includes a III-V material.
7. A light amplifier as claimed in claim 1 wherein the pump laser light output surface is a horizontal output parallel with the plane of the light waveguide.
8. A light amplifier as claimed in claim 1 wherein the pump laser light output surface is a vertical output generally in a direction perpendicular to the plane of the light waveguide.
9. A light amplifier as claimed in claim 1 wherein the lattice matching virtual substrate includes a relatively high index of refraction material adjacent the first opposed surface and a relatively low index of refraction material adjacent the second opposed surface.
10. A light amplifier as claimed in claim 1 further including a single crystal cladding layer positioned between the light amplifying gain medium and the lattice matching virtual substrate.
11. A light amplifier as claimed in claim 10 wherein the single crystal cladding layer includes material graded from a relatively high index of refraction adjacent the light amplifying gain medium to a relatively low index of refraction adjacent the first opposed surface of the lattice matching virtual substrate.
12. A light amplifier comprising:
a single crystal semiconductor substrate;
a rare earth oxide, light amplifying gain medium deposited on the semiconductor substrate and formed into a light waveguide with a light input surface;
a pump laser having a light output surface; and
a lattice matching virtual substrate including a first layer of single crystal rare earth oxide material with a crystal structure and spacing substantially the same as the crystal structure and spacing of the light amplifying gain medium and a first opposed surface and a second layer of single crystal rare earth oxide material with a crystal structure and spacing substantially the same as the crystal structure and spacing of an adjacent surface of the pump laser and a second opposed surface, the lattice matching virtual substrate integrating the light amplifying gain medium and the pump laser with the first opposed surface being substantially crystal lattice matched to the light amplifying gain medium and the second opposed surface being substantially crystal lattice matched to the pump laser, the pump laser being further positioned with the light output surface coupled to the light input surface of the gain medium so as to introduce pump energy into the light waveguide.
13. A light amplifier as claimed in claim 12 wherein the semiconductor substrate includes silicon.
14. A light amplifier as claimed in claim 13 further including control and monitoring electronics fabricated on the silicon substrate and in electrical communication with the pump laser.
15. A light amplifier as claimed in claim 12 wherein the pump laser light output surface is a horizontal output parallel with the plane of the light waveguide.
16. A light amplifier as claimed in claim 12 wherein the pump laser light output surface is a vertical output generally in a direction perpendicular to the plane of the light waveguide.
17. A light amplifier as claimed in claim 12 wherein the lattice matching virtual substrate includes a relatively high index of refraction material adjacent the first opposed surface and a relatively low index of refraction material adjacent the second opposed surface.
18. A light amplifier as claimed in claim 12 further including a single crystal cladding layer positioned between the light amplifying gain medium and the lattice matching virtual substrate.
19. A light amplifier as claimed in claim 18 wherein the single crystal cladding layer includes material graded from a relatively high index of refraction adjacent the light amplifying gain medium to a relatively low index of refraction adjacent the first opposed surface of the lattice matching virtual substrate.
20. A method of fabricating a light amplifier comprising the steps of:
providing a rare earth oxide, light amplifying gain medium formed into a light waveguide with a light input surface;
growing a lattice matching virtual substrate on the light amplifying gain medium, the lattice matching virtual substrate being substantially crystal lattice matched to the light amplifying gain medium, the virtual substrate having an opposed surface, and growing the lattice matching virtual substrate including growing a first material of single crystal rare earth oxide with a crystal structure and spacing substantially the same as the crystal structure and spacing of the rare earth oxide light amplifying gain medium and a second material of single crystal rare earth oxide with a crystal structure and spacing substantially the same as the crystal structure and spacing of an adjacent surface of the pump laser; and
growing a pump laser on the opposed surface of the light amplifying medium, the opposed surface of the light amplifying medium being crystal lattice matched to the pump laser, the pump laser being further positioned with a light output surface adjacent the light input surface of the gain medium so as to introduce pump energy into the light waveguide.
21. A method as claimed in claim 20 wherein the step of growing the lattice matching virtual substrate includes graduating from the first material to the second material in a common layer.
22. A method as claimed in claim 20 wherein the step of growing the lattice matching virtual substrate and the step of growing a pump laser both include epitaxially growing.
23. A method as claimed in claim 20 wherein the step of growing the lattice matching virtual substrate and the step of growing a pump laser epitaxially are performed in situ in an epitaxial chamber.
24. A method as claimed in claim 20 wherein the step of growing the lattice matching virtual substrate includes growing a relatively high index of refraction material adjacent the light amplifying gain medium and a relatively low index of refraction material adjacent the opposed surface.
25. A method as claimed in claim 20 further including a step of growing a single crystal cladding layer between the light amplifying gain medium and the lattice matching virtual substrate.
26. A method as claimed in claim 25 wherein the step of growing the single crystal cladding layer includes grading the cladding layer from a material with a relatively high index of refraction adjacent the light amplifying gain medium to a material with a relatively low index of refraction adjacent the first opposed surface of the lattice matching virtual substrate.