Single crystal reo buffer on amorphous SiO
A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.
1. A method of forming a layer of amorphous silicon oxide between a layer of rare earth oxide and a silicon substrate, the method comprising the steps of:
providing a crystalline silicon substrate;
depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C., the rare earth metal forming a layer of rare earth silicide on the substrate;
depositing a first layer of rare earth oxide on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate; and
annealing the structure in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.
2. A method as claimed in claim 1 wherein the layer of rare earth metal is deposited with a thickness of 1-2 monolayers.
3. A method as claimed in claim 1 wherein the first layer of rare earth oxide is deposited with a thickness in a range of 3 nm to 10 nm.
4. A method as claimed in claim 1 wherein the annealing step is performed at a temperature of approximately 900° C.
5. A method of fabricating a layer of single-crystal semiconductor material on a silicon substrate comprising the steps of:
providing a crystalline silicon substrate;
depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C., the rare earth metal forming a layer of rare earth silicide on the substrate;
depositing a first layer of rare earth oxide on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate;
annealing the structure in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide;
depositing a second layer of rare earth oxide with a structure and lattice constant substantially similar to the substrate on the first layer of rare earth oxide to form a template for the subsequent deposition of a III-N semiconductor material; and
depositing a layer of III-N semiconductor material on the second layer of rare earth oxide, the III-N semiconductor material having a structure and lattice constant substantially similar to the substrate.
6. A method as claimed in claim 5 wherein the layer of rare earth metal is deposited with a thickness of 1-2 monolayers.
7. A method as claimed in claim 5 wherein the first layer of rare earth oxide is deposited with a thickness in a range of 3 nm to 10 nm.
8. A method as claimed in claim 5 wherein the annealing step is performed at a temperature of approximately 900° C.
9. A method as claimed in claim 5 wherein the second layer of rare earth oxide is deposited with a thickness in a range of 50 nm to 500 nm.