Strain inducing multi-layer cap
A strained transistor includes a silicon transistor, an encapsulating layer of silicon insulating material with an outer surface, and a stress inducing multilayer cap deposited on the outer surface of the encapsulating layer with at least two layers including a layer of rare earth oxide and a layer including silicon. The stress inducing cap can be designed to provide either compressive strain or tensile strain and virtually any desired amount of strain without producing dislocations, defects, and fractures in the structure.
1. A strained transistor comprising:
a silicon transistor;
an encapsulating layer of silicon insulating material with an outer surface; and
a stress inducing multilayer cap deposited on the outer surface of the encapsulating layer with at least two layers including a layer of rare earth oxide and a layer including silicon.
2. A strained transistor as claimed in claim 1 wherein the encapsulating layer is formed with a shape that directs at least a portion of the induced stress along a channel of the transistor.
3. A strained transistor as claimed in claim 2 wherein the encapsulating layer is generally dome shaped.
4. A strained transistor as claimed in claim 2 wherein the stress inducing multilayer cap is designed to induce one of compressive and tensile stress.
5. A method of fabricating a strained transistor comprising the steps of:
providing a transistor;
forming an encapsulating layer over the transistor, the encapsulating layer having an outer surface; and
depositing a stress inducing multilayer cap on the outer surface of the encapsulating layer, the multilayer cap being formed of multiple layers of stress inducing material including alternate layers of rare earth oxide and one of silicon and silicon insulating material, the multiple layers being selected to provide a desired total amount of stress on the transistor in gradual steps.
6. A method as claimed in claim 5 wherein the step of providing the transistor includes providing a silicon transistor.
7. A method as claimed in claim 5 wherein the step of forming the encapsulating layer includes forming the encapsulating layer of silicon insulating material.
8. A method as claimed in claim 5 wherein the step of forming the encapsulating layer includes forming the encapsulating layer with a shape that directs at least a portion of the induced stress along a channel of the transistor.
9. A method as claimed in claim 8 wherein the step of forming the encapsulating layer includes forming the encapsulating layer with a generally dome shape.
10. A method as claimed in claim 5 including the step of designing the stress inducing multilayer cap to induce one of compressive and tensile stress.