Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
1. A device comprising:
a substrate;
a layer of a large band gap material; and
a layer of a small band gap material such that the layer of the large band gap material is contacting the layer of the small band gap material wherein the large band gap material and the small band gap material are of composition [RE1] v [RE2] w [RE3] x [J1] y [J2] z wherein [RE] is chosen from a group comprising Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb) and Luthium (Lu), [J1] and [J2] are chosen from a group comprising Oxygen (O), Nitrogen (N), and Phosphorus (P), and 0≦v, w, z≦5; 0<x, y≦5.
2. The device of claim 1 wherein said large band gap material has a band gap greater than 1.4 eV.
3. The device of claim 1 wherein said substrate is chosen from a group comprising silicon, germanium, Si—Ge mixtures, sapphire and silicon dioxide.
4. A semiconductor device comprising:
a substrate; and
a layer comprising a lower surface and an upper surface wherein the composition of the layer varies from the upper surface to the lower surface from a composition with a large band gap to a composition with a lower band gap at the lower surface, wherein the large band gap material has a band gap of at least 1.4 eV at the upper surface wherein the layer is of composition [RE1] v [RE2] w [RE3] x [J1] y [J2] z wherein [RE] is chosen from a group comprising Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb) and Luthium (Lu), [J1] and [J2] are chosen from a group comprising Oxygen (O), Nitrogen (N), and Phosphorus (P), and 0≦v, w, z≦5; 0<x, y≦5.
5. The device of claim 4 wherein said large band gap material has a band gap greater than 1.2 eV.
6. The device of claim 4 wherein said substrate is chosen from a group comprising silicon, germanium, Si—Ge mixtures, sapphire and silicon dioxide.
7. The device of claim 1 wherein said layer of a large band gap material is at least two or more layers of a large band gap material and said layer of a small band gap material is at least two or more layers of a small band gap material wherein one of the large band gap material layers separates the small band gap material layers.