Modification of REO by subsequent III-N EPI process
A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.
1. A method of growing single crystal III-N material on a semiconductor substrate comprising the steps of:
providing a substrate including one or more layers of one of crystalline silicon or germanium and a layer of rare earth oxide; and
epitaxially growing a single crystal III-N material on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of one of a nitrogen containing species or a III-material species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.
2. A method as claimed in claim 1 wherein the new alloy includes one of rare earth nitride and rare earth silicide.
3. A method as claimed in claim 1 wherein the substrate includes a first layer of single crystal silicon, an intermediate layer of single crystal rare earth oxide, and a second layer single crystal silicon.
4. A method as claimed in claim 3 wherein the III-material species includes AlN.
5. A method as claimed in claim 4 wherein the epitaxial process that elevates the temperature includes MBE.
6. A method of growing single crystal III-N material on a semiconductor substrate comprising the steps of:
providing a substrate including one of crystalline silicon or germanium;
epitaxially growing a layer of single crystal rare earth oxide on the substrate; and
epitaxially growing a single crystal III-N material on the layer of rare earth oxide using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.
7. A method as claimed in claim 6 wherein the new alloy includes one of rare earth nitride and rare earth silicide.
8. A method as claimed in claim 6 wherein the step of providing a substrate includes providing a silicon substrate.
9. A method as claimed in claim 6 wherein the step of epitaxially growing a layer of rare earth oxide includes growing a layer including one of Gd 2 O 3 , Er 2 O 3 , Lu 2 O 3 and Yb 2 O 3 .
10. A method as claimed in claim 6 wherein the step of epitaxially growing a single crystal III-N material includes epitaxially growing a layer of GaN.
11. A method as claimed in claim 6 wherein the step of using a process that elevates the temperature of the layer of rare earth oxide includes using an MOCVD process.
12. A method as claimed in claim 6 wherein the step of using a process that elevates the temperature of the layer of rare earth oxide in the presence of an N containing species includes using NH 3 as the N containing species.
13. A method of growing single crystal III-N material on a semiconductor substrate comprising the steps of:
providing a substrate including a first layer of one of crystalline silicon or germanium, an intermediate layer of single crystal rare earth oxide, and a second layer of one of crystalline silicon or germanium; and
epitaxially growing a single crystal III-N material on the second layer using a process that elevates the temperature of the second layer and the intermediate layer into a range of approximately 750° C. to approximately 1250° C. in the presence of a III containing species, whereby a portion of the second layer and the intermediate layer is transformed to a rare earth silicide.
14. A method as claimed in claim 13 wherein the III-N material includes AlN and the III material species is Al.
15. A method as claimed in claim 13 wherein the portion of the second layer and the intermediate layer transformed is in a range of 1% to 100%.
16. A method as claimed in claim 14 wherein the step of using a process that elevates the temperature of the layer of rare earth oxide includes using an MBE process.
17. A structure including single crystal III-N material on a semiconductor substrate comprising:
a substrate including one of crystalline silicon or germanium;
a layer of single crystal rare earth oxide epitaxially grown on the substrate;
a layer of single crystal III-N material epitaxially grown on the layer of rare earth oxide; and
the layer of rare earth oxide including a portion of rare earth oxide adjacent the substrate and a portion of one of rare earth nitride and rare earth silicide adjacent the layer of single crystal III-N material.
18. A structure as claimed in claim 17 wherein the substrate includes a silicon substrate.
19. A structure as claimed in claim 17 wherein the layer of rare earth oxide includes one of Gd 2 O 3 , Er 2 O 3 , Lu 2 O 3 and Yb 2 O 3 .
20. A structure as claimed in claim 17 wherein the single crystal III-N material includes a layer of GaN.