Top ARC polymers, method of preparation thereof and top ARC compositions comprising the same
View Patent ↗Disclosed herein are a top anti-reflective coating polymer used in a photolithography process, a method for preparing the anti-reflective coating polymer, and an anti-reflective coating composition comprising the anti-reflective coating polymer. The disclosed top anti-reflective coating polymer is used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below: wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are in the range between 0.05 and 0.9. The top anti-reflective coating formed using the anti-reflective coating polymer is not soluble in water and can be applied to immersion lithography using water as a medium for a light source. Since the disclosed top anti-reflective coating can reduce the reflectance from an underlayer, the uniformity of CD is improved, thus enabling the formation of an ultrafine pattern.
1. A top anti-reflective coating composition comprising:
a top anti-reflective coating polymer having a weight-average molecular weight in the range of 1,000–1,000,000, and represented by Formula 1 below:
wherein R1, R2, and R3 are independently hydrogen or a methyl group; and a, b, and c represent the mole fraction of each monomer, and are each in the range of 0.05 and 0.9, and,
wherein the composition is prepared by dissolving the polymer in 1,000–10,000 wt % of n-butanol, based on the weight of the polymer.
2. A top anti-reflective coating composition comprising:
a top anti-reflective coating polymer having a weight-average molecular weight in the range of 1,000–1,000,000, and represented by Formula 1 below;
wherein R1, R2, and R3 are independently hydrogen or a methyl group; and a, b, and c represent the mole fraction of each monomer, and are each in the range of 0.05 and 0.9, and,
further comprising 1–20 wt % of L-proline, based on the weight of the polymer.
3. A method for forming a pattern of a semiconductor device, comprising:
(a) applying a photoresist to a semiconductor substrate;
(b) applying a top anti-reflective coating composition, a top anti-reflective coating polymer having a weight-average molecular weight in the range of 1,000–1,000,000, and represented by Formula 1 below;
wherein R1, R2, and R3 are independently hydrogen or a methyl group; and a, b, and c represent the mole fraction of each monomer, and are each in the range of 0.05 and 0.9 on top of the photoresist, and baking the same to form a top anti-reflective coating; and
(c) exposing the photoresist to light, and developing the exposed photoresist to form a photoresist pattern.
4. The method according to claim 3 , wherein the baking is carried out at a temperature in the range of 70° C.–200° C.
5. The method according to claim 3 , wherein light is transmitted through a liquid in the exposure step.
6. The method according to claim 3 , wherein light is transmitted through water in the exposure step.
7. The method according to claim 3 , wherein the developing is carried out by using a 0.01˜5 wt % solution of tetramethyl ammonium hydroxide (TMAH).