Method and apparatus for diagnosing fault in semiconductor device

1. A method for diagnosing a fault in a semiconductor device, comprising:

a laser applying step of applying a pulse laser beam having a predetermined wavelength to a semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam, wherein a pulse width of the pulse laser beam is not shorter than 1 femtosecond, and is not longer than 10 picoseconds, and the semiconductor device is held at a state where no bias voltage is applied thereto;

a detection/conversion step of detecting an electromagnetic wave generated by an optical beam induced current change produced at a laser applied position in the semiconductor device, and converting the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave; and

a fault diagnosis step of deriving an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

2. A method for diagnosing a fault in a semiconductor device according to claim 1 , the fault diagnosis step comprising:

a determining step of determining a phase of the time-varying voltage signal;

an imaging step of imaging the electric field distribution in the semiconductor device on the basis of the determined phase depending on an electric field at the position to which the pulse laser beam is applied; and

a fault/defect analyzing step of specifying a fault/defect position in the semiconductor device on the basis of the imaged electric field distribution.

3. A method for diagnosing a fault in a semiconductor device according to claim 1 , the detection/conversion step comprising;

a step of determining a polarization direction of the electromagnetic wave;

a step of imaging an two-dimensional electric field vector distribution in the semiconductor device on the basis of the polarization direction in parallel with the electric field in the semiconductor device; and

a step of specifying a fault/defect position in the semiconductor device on the basis of the imaged electric field vector distribution.

4. A method for diagnosing a fault in a semiconductor device according to claim 1 , the fault diagnosis step comprising:

a step of at a predetermined sampling time, sampling the time-varying voltage signal corresponding to an electric field amplitude of the electromagnetic wave;

a step of deriving the electric field distribution in the semiconductor device on the basis of the sampled electric field amplitude in proportion to an electric field magnitude at a position to the pulse laser beam is applied; and

a step of specifying a fault/defect position in the semiconductor device on the basis of the electric field distribution.

5. A method for diagnosing a fault in a semiconductor device according to claim 1 , the fault diagnosis step comprising:

a step of at a plurality of predetermined sampling times, sampling the time-varying voltage signal corresponding to an electric field amplitude of the electromagnetic wave;

a step of deriving the electric field distributions in the semiconductor device respectively corresponding to the plurality of predetermined sampling times, on the basis of the sampled electric field amplitudes in proportion to an electric field magnitude at a position to which the pulse laser beam is applied; and

a step of specifying a fault/defect position in the semiconductor device on the basis of the electric field distributions.

6. A method for diagnosing a fault in a semiconductor device according to claim 1 , being performed during a manufacturing process for the semiconductor device.

7. A method for diagnosing a fault in a semiconductor device according to claim 1 , wherein the predetermined wavelength of the pulse laser beam is not shorter than 300 nanometers, and is not longer than 2 microns, and

the pulse laser beam is applied to a chip back surface of the semiconductor device.

8. A method for diagnosing a fault in a semiconductor device according to claim 1 , wherein the semiconductor device is an Si device,

the predetermined wavelength of the pulse laser beam is not shorter than 1 micron, and is not longer than 2 microns, and

the pulse laser beam is applied to a chip back surface of the Si device.

9. A method for diagnosing a fault in a semiconductor device according to claim 1 , the fault diagnosis step comprising a step of comparing the derived electric field distribution with an electric field distribution of a quality semiconductor device.

10. An apparatus for diagnosing a fault in a semiconductor device, comprising:

an laser applying unit for applying a pulse laser beam having a predetermined wavelength to a semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam, wherein a pulse width of the pulse laser beam is not shorter than 1 femtosecond and is not longer than 10 picoseconds, and the semiconductor device is held at a state where no bias voltage is applied thereto;

a detection/conversion unit for detecting an electromagnetic wave generated by an optical beam induced current change produced at a laser applied position in the semiconductor device, and converting the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave; and

a fault diagnosis unit for deriving an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

11. An apparatus for diagnosing a fault in a semiconductor device according to claim 10 , wherein the fault diagnosis unit includes:

a determining unit for determining a phase of the time-varying voltage signal;

an imaging unit for imaging the electric field distribution in the semiconductor device on the basis of the determined phase depending on an electric field at the position to which the pulse laser beam is applied; and

a fault/defect analyzing unit for specifying a fault/defect position in the semiconductor device on the basis of the imaged electric field distribution.

12. An apparatus for diagnosing a fault in a semiconductor device according to claim 10 , wherein the fault diagnosis unit includes:

a determining unit for determining a polarization direction of the electromagnetic wave;

an imaging unit for imaging an electric field distribution in the semiconductor device on the basis of the determined polarization direction depending on the electric field at a position to which the pulse laser beam is applied; and

a fault/defect analyzing unit for specifying a fault/defect position in the semiconductor device on the basis of the imaged electric field distribution.

13. An apparatus for diagnosing a fault in a semiconductor device according to claim 10 , wherein the laser applying unit generates the pulse laser beam having:

the predetermined wavelength that is not shorter than 300 nanometers, and is not longer than 2 microns; and

the laser applying unit applies the pulse laser beam to a chip back surface of the semiconductor device.

14. An apparatus for diagnosing a fault in a semiconductor device according to claim 10 , wherein the semiconductor device is an Si device,

the laser applying unit generates the pulse laser beam having:

the predetermined wavelength that is not shorter than 1 micron, and is not longer than 2 microns; and

the laser applying unit applies the pulse laser beam to a chip back surface of the Si device.

15. A method for diagnosing a fault in a semiconductor device, comprising the steps of:

applying a pulse laser beam having a predetermined wavelength to a semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam, wherein a pulse width of the pulse laser beam is not shorter than 1 femtosecond and is not longer than 10 picoseconds, and the semiconductor device is held at a state where no bias voltage is applied thereto;

detecting an electromagnetic wave generated by an optical beam induced current change produced at a laser applied position in the semiconductor device, and converting the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave; and

deriving an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.