Semiconductor device and method of manufacturing the same

1. A semiconductor device manufacturing method comprising:

arranging, on a base plate, (i) a plurality of semiconductor structures each of which includes: a semiconductor substrate, a plurality of external connection portions on an upper side of the semiconductor substrate, and a sealing film formed between the external connection portions, such that an upper surface of the sealing film is flush with upper surfaces of the external connection portions, and (ii) an insulating member such that the insulating member is located between adjacent semiconductor structures;

providing an insulating film on the semiconductor structures and the insulating member;

after providing the insulating film on the semiconductor structures and the insulating member, heating and pressing the insulating member arranged on the base plate to planarize an upper surface of the insulating member;

forming, on the insulating film, a plurality of upper wirings each of which includes at least one layer having a connection pad portion, and each of which is connected to at least one of the external connection portions; and

cutting the insulating film and the insulating member between the semiconductor structures to obtain individual semiconductor devices, including at least one semiconductor device in which at least one of the connection pad portions is arranged on a region corresponding to the insulating member formed on a side of the semiconductor structure.

2. A method according to claim 1 , wherein the insulating member is cut between the semiconductor structures so that a plurality of semiconductor structures are included in at least one of the semiconductor devices.

3. A method according to claim 1 , wherein the insulating member is made of a resin containing reinforcing materials.

4. A method according to claim 1 , wherein the upper surface of the insulating member is planarized so as to be substantially flush with upper surfaces of the semiconductor structures.

5. A method according to claim 1 , further comprising forming a solder ball on at least one of the connection pad portions.

6. A method according to claim 1 , wherein cutting the insulating member includes cutting the base plate.

7. A semiconductor device manufacturing method comprising:

arranging, on a base plate, (i) a plurality of semiconductor structures each of which includes a plurality of external connection portions on an upper surface, and (ii) an insulating member such that the insulating member is located between adjacent semiconductor structures;

heating and pressing the insulating member arranged on the base plate planarize an upper surface of the insulating member;

forming, on the insulating member, a plurality of upper wirings each of which includes at least one layer having a connection pad portion, and each of which is connected to at least one of the external connection portions; and

cutting the insulating member between the semiconductor structures to obtain individual semiconductor devices, including at least one semiconductor device in which at least one of the connection pad portions is arranged on a region corresponding to the insulating member formed on a side of the semiconductor structure;

wherein the heating an pressing to perform the planarization of the insulating member is executed while the upper surface of the semiconductor structure is defined as a press limit surface.

8. A semiconductor device manufacturing method comprising:

arranging, on a base plate, (i) a plurality of semiconductor structures each of which includes a plurality of external connection portions on an upper surface, and (ii) an insulating member such that the insulating member is located between adjacent semiconductor structures;

heating and pressing the insulating member arranged on the base plate planarize an upper surface of the insulating member;

after the heating and pressing to perform the planarization of the insulating member, polishing the upper surface of the semiconductor structure and the upper surface of the insulating member;

forming, on the insulating member, a plurality of upper wirings each of which includes at least one layer having a connection pad portion, and each of which is connected to at least one of the external connection portions; and

cutting the insulating member between the semiconductor structures to obtain individual semiconductor devices, including at least one semiconductor device in which at least one of the connection pad portions is arranged on a region corresponding to the insulating member formed on a side of the semiconductor structure.

9. A semiconductor device manufacturing method comprising:

arranging, on a base plate, (i) a plurality of semiconductor structures each of which includes a plurality of external connection portions on an upper surface, and (ii) an insulating member such that the insulating member is located between adjacent semiconductor structures;

heating and pressing the insulating member arranged on the base plate planarize an upper surface of the insulating member;

forming, on the insulating member, a plurality of upper wirings each of which includes at least one layer having a connection pad portion, and each of which is connected to at least one of the external connection portions;

cutting the insulating member and the base plate between the semiconductor structures to obtain individual semiconductor devices, including at least one semiconductor device in which at least one of the connection pad portions is arranged on a region corresponding to the insulating member formed on a side of the semiconductor structure; and

arranging another base plate under the base plate, before the base plate is cut, and removing said another base plate after the base plate is cut.

10. A semiconductor device manufacturing method comprising:

arranging, on a base plate, (i) a plurality of semiconductor structures each of which includes: a semiconductor substrate, a plurality of external connection portions on an upper side of the semiconductor substrate, and a sealing film formed between the external connection portions, such that an upper surface of the sealing film is flush with upper surfaces of the external connection portions, and (ii) an insulating material such that the insulating material is located between adjacent semiconductor structures;

providing an insulating film material on the semiconductor structures and the insulating material;

heating and pressing the insulating material and the insulating film material to form an insulating member with a planarized upper surface from the insulating material and to form an insulating film on the semiconductor structures and the insulating member from the insulating film material;

forming, on the insulating film, a plurality of upper wirings each of which includes at least one layer having a connection pad portion, and each of which is connected to at least one of the external connection portions; and

cutting the insulating film and the insulating member between the semiconductor structures to obtain individual semiconductor devices, including at least one semiconductor device in which at least one of the connection pad portions is arranged on a region corresponding to the insulating member formed on a side of the semiconductor structure.

11. A method according to claim 10 , wherein the insulating member is cut between the semiconductor structures so that a plurality of semiconductor structures are included in at least one of the semiconductor devices.

12. A method according to claim 10 , wherein the insulating member is made of a resin containing reinforcing materials.

13. A method according to claim 10 , wherein the upper surface of the insulating member is planarized so as to be substantially flush with upper surfaces of the semiconductor structures.

14. A method according to claim 10 , further comprising forming a solder ball on at least one of the connection pad portions.

15. A method according to claim 10 , wherein cutting the insulating member includes cutting the base plate.