Method for producing a dielectric material on a semiconductor device and semiconductor device
View Patent ↗Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitride or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element. The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element.
1. A semiconductor memory comprising:
a dielectric layer comprising aluminum oxide nitride and a rare earth metal element; and
a storage capacitor, wherein the dielectric layer forms a dielectric of the storage capacitor, wherein the dielectric layer comprises at least four different layers deposited by an atomic layer deposition process, wherein the at least four different layers comprise:
a first layer comprising an aluminum oxide, a second layer comprising an aluminum nitride, a third layer comprising a rare earth metal oxide and a fourth layer comprising a rare earth metal nitride.
2. The semiconductor memory according to claim 1 , whereby a fifth layer comprises a silicon oxide, a sixth layer comprises a silicon nitride.
3. The semiconductor memory according to claim 1 , further comprising a transistor, whereby the dielectric material constitutes a dielectric layer of the transistor.
4. A semiconductor device comprising:
a transistor with a dielectric layer, wherein the dielectric layer comprises aluminum silicon oxide nitride and a rare earth metal element, wherein the dielectric layer comprises at least four different layers deposited by an atomic layer deposition process, wherein the at least four different layers comprise:
a first layer comprising an aluminum oxide, a second layer comprising an aluminum nitride, a third layer comprising a rare earth metal oxide and a fourth layer comprising a rare earth metal nitride.
5. The semiconductor device according to claim 4 , wherein the dielectric layer comprises at least two additional different layers deposited by an atomic layer deposition process and wherein the at least two additional different layers comprise:
a fifth layer comprising a silicon oxide and a sixth layer comprising a silicon nitride.
6. The semiconductor device according to claim 4 , further comprising a capacitor, wherein the dielectric material constitutes a dielectric layer of the capacitor.
7. A semiconductor memory comprising:
a dielectric layer comprising aluminum oxide nitride and a rare earth metal element; and
a capacitor, wherein the dielectric layer forms a dielectric of the capacitor, wherein the dielectric layer comprises at least four different layers deposited by an atomic layer deposition process, and wherein the at least four different layers comprise:
a first layer comprising a silicon oxide, a second layer comprising a silicon nitride, a third layer comprising a rare earth metal oxide and a fourth layer comprising a rare earth metal nitride.
8. The semiconductor memory according to claim 7 , whereby a fifth layer comprises an aluminum oxide and a sixth layer comprises an aluminum nitride.
9. The semiconductor memory according to claim 7 , further comprising a transistor, whereby the dielectric material constitutes a dielectric layer of the transistor.
10. A semiconductor device comprising:
a transistor with a dielectric layer, wherein the dielectric layer comprises aluminum silicon oxide nitride and a rare earth metal element, wherein the dielectric layer comprises at least four different layers deposited by an atomic layer deposition process, wherein the at least four different layers comprise:
a first layer comprising a silicon oxide, a second layer comprising a silicon nitride, a third layer comprising a rare earth metal oxide and a fourth layer comprising a rare earth metal nitride.
11. The semiconductor device according to claim 10 , wherein the dielectric layer comprises at least two additional different layers deposited by an atomic layer deposition process and wherein the at least two additional different layers comprise:
a fifth layer comprising an aluminum oxide and a sixth layer comprising an aluminum nitride.
12. The semiconductor device according to claim 10 , further comprising a capacitor, wherein the dielectric material constitutes a dielectric layer of the capacitor.