IP Library Granted Patent US 7,211,466
Granted Patent B2
US 7,211,466 · App. 11/047,173 · Granted May 1, 2007

Stacked die semiconductor device

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Quick Facts
Patent No.
US 7,211,466
App. No.
11/047,173
Granted
May 1, 2007
Kind
B2
Abstract

A stacked multichip package ( 100 ) has a base carrier ( 102 ) having a top side ( 108 ) and a bottom side ( 110 ), a bottom integrated circuit die ( 104 ) having a bottom surface ( 112 ) attached to the base carrier top side ( 108 ), and an opposing, top surface ( 114 ). The top surface ( 114 ) has a peripheral area including a plurality of first bonding pads and a central area ( 120 ). A bead ( 124 ) is formed on the top surface ( 114 ) of the bottom die ( 104 ) between the peripheral area and the central area ( 120 ). A top integrated circuit die ( 106 ) having a bottom surface is positioned over the bottom die ( 104 ) and the bottom surface of the top die ( 106 ) is attached to the top surface ( 114 ) of the bottom die ( 104 ) via the bead ( 124 ). The bead ( 124 ) maintains a predetermined spacing between the bottom die ( 104 ) and the top die ( 106 ) so that wirebonds of first wires ( 122 ) connecting the bottom die ( 104 ) to the base carrier ( 102 ) are not damaged when the top die ( 106 ) is attached to the bottom die ( 104 ).

Claims (27)

1. A method of making a stacked multichip package comprising the steps of:

attaching a bottom integrated circuit die to a base carrier, the bottom die having a top surface and a bottom surface, wherein the bottom surface is attached to a top side of the base carrier and wherein the bottom die top surface has a central area and a peripheral area, the peripheral area including a plurality of first bonding pads;

electrically connecting the bottom die to the base carrier by wirebonding first wires to the plurality of first bonding pads of the bottom die and to corresponding first leads on the top side of the base carrier;

forming a continuous bead of adhesive material between the central area and the peripheral area on the top surface of the bottom die, wherein the bead has a predetermined height and wherein the bead does not extend to the first bonding pads;

filling the central area on the top surface of the bottom die with a second adhesive material, wherein the second adhesive material is surrounded by the bead;

attaching a bottom surface of a top integrated circuit die to the top surface of the bottom die with the adhesive material bead and the second adhesive material, wherein the bead causes the top die to be spaced from the bottom die such that the top die does not contact the first wires and wherein the top die has substantially the same length and width as the bottom die; and

electrically connecting the top die to the base carrier by wirebonding second wires to second bonding pads located on a top surface of the top die and to corresponding second leads on the base carrier.

2. The method of making a stacked multichip package of claim 1 , wherein the material used to form the bead has a higher viscosity than the second adhesive material.

3. The method of making a stacked multichip package of claim 2 , wherein the bead and the second adhesive material comprise epoxy.

4. The method of making a stacked multichip package of claim 1 , further comprising the step of encapsulating the top and bottom dies, the first and second wires, and at least a portion of the base carrier with a resin.

5. A method of making a stacked multichip package comprising the steps of:

attaching a bottom integrated circuit die to a base carrier, the bottom die having a top surface and a bottom surface, wherein the bottom surface is attached to a top side of the base carrier and wherein the bottom die top surface has a central area and a peripheral area, the peripheral area including a plurality of first bonding pads;

electrically connecting the bottom die to the base carrier by wirebonding first wires to the plurality of first bonding pads of the bottom die and to corresponding first leads on the top side of the base carrier;

forming a continuous bead of adhesive material between the central area and the peripheral area on the top surface of the bottom die, wherein the bead has a predetermined height and wherein the bead does not extend to the first bonding pads;

filling the central area on the top surface of the bottom die with a second adhesive material, wherein the second adhesive material is surrounded by the bead;

attaching a bottom surface of a top die to the top surface of the bottom die, wherein the bead and the second adhesive material secure the top die to the bottom die and wherein the bead causes the top die to be spaced from the bottom die such that the top die does not contact the first wires;

electrically connecting the top die to the base carrier by wirebonding second wires to second bonding pads located on a top surface of the top die and to corresponding second leads on the base carrier; and

encapsulating the top and bottom dies, the first and second wires, and at least a portion of the base carrier with a resin.

6. The method of making a stacked multichip package of claim 5 , wherein the material used to form the bead has a higher viscosity than the second adhesive material.

7. The method of making a stacked multichip package of claim 6 , the bead and the second adhesive material comprise epoxy.

8. A method of making a stacked multichip package comprising the steps of:

attaching a bottom integrated circuit die to a base carrier, the bottom die having a top surface and a bottom surface, wherein the bottom surface is attached to a top side of the base carrier and wherein the bottom die top surface has a central area and a peripheral area, the peripheral area including a plurality of first bonding pads;

electrically connecting the bottom die to the base carrier by wirebonding first wires to the plurality of first bonding pads of the bottom die and to corresponding first leads on the top side of the base carrier;

forming a continuous bead of adhesive material between the central area and the peripheral area on the top surface of the bottom die, wherein the bead has a predetermined height and wherein the bead does not extend to the first bonding pads;

filling the central area on the top surface of the bottom die with a second adhesive material, wherein the second adhesive material is surrounded by the bead;

attaching a bottom surface of a top integrated circuit die to the top surface of the bottom die with the adhesive material bead, wherein the bead causes the top die to be spaced from the bottom die such that the top die does not contact the first wires and wherein the top die is larger than the bottom die; and

electrically connecting the top die to the base carrier by wirebonding second wires to second bonding pads located on a top surface of the top die and to corresponding second leads on the base carrier.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0655 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →