Method for manufacturing thin GaAs die with copper-back metal structures
View Patent ↗A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
1. A method comprising:
placing a GaAs die having a thickness of less than approximately 50 microns on a lead frame having a die attach surface comprising a soft solder; and
heating the soft solder to attach the die to the lead frame.
2. The method as in claim 1 , further including encapsulating the GaAs die in a plastic die package.
3. The method as in claim 1 , wherein the GaAs die comprises:
said GaAs substrate having an active surface and a backside surface;
a diffusion barrier layer overlying the backside surface; and
a copper back-metal layer overlying the diffusion barrier.
4. The method as in claim 3 , wherein the GaAs substrate has a thickness of between approximately 15 microns and 50 microns.
5. The method as in claim 3 , wherein the GaAs substrate has a thickness in the range of approximately 15–35 microns.
6. The method as in claim 3 , wherein the GaAs substrate has a thickness of less than approximately 25 microns.
7. The method as in claim 3 , wherein the copper back-metal layer has a thickness sufficient to provide mechanical support for the GaAs substrate during a soft-solder die attach process.
8. The method as in claim 3 , wherein after the soft solder is heated, gold is intermingled with the soft solder.
9. A method comprising:
forming a diffusion barrier layer overlying a backside surface of a GaAs substrate;
forming a stress relief layer overlying the diffusion barrier layer;
forming a copper back-metal layer overlying the stress relief layer; and
forming an oxidation resistant layer overlying the copper-back metal layer.
10. The method as in claim 9 , wherein the stress relief layer and the oxidation resistant layer comprise gold layers.
11. The method as in claim 9 , further comprising coupling the oxidation resistant layer to a die attach surface of a lead frame.
12. The method as in claim 11 , further comprising encapsulating the GaAs substrate, the stress relief layer, the copper back-metal layer and the oxidation resistant layer in a plastic die package.
13. The method as in claim 9 , wherein coupling the oxidation resistant layer to a die attach surface comprises reflowing a soft solder layer overlying the die attach surface so as to form a solder joint between the die attach surface and at least the oxidation resistant layer.
14. The method as in claim 9 , wherein the GaAs substrate has a thickness of between approximately 15 microns and 50 microns and the back-metal layer has thickness of between approximately 11 microns to 15 microns.
15. A method comprising:
forming a semiconductor die comprising a GaAs substrate and a copper back-metal layer overlying a backside surface of the GaAs substrate;
disposing the semiconductor die at a soft solder layer of a die attach surface of a lead frame;
reflowing the soft-solder layer so as to form a solder joint between the die attach surface and the semiconductor die;
electrically coupling the semiconductor die to one or more leads of the lead frame; and
encapsulating the semiconductor die and the lead frame in a plastic die package.
16. The method as in claim 15 , wherein forming the semiconductor die comprises forming a stress-relief layer overlying the backside surface of the GaAs substrate, wherein the stress relief layer is between the backside surface of the GaAs substrate and the back-metal layer.
17. The method as in claim 15 , wherein forming the semiconductor die comprises forming an oxidization resistant layer overlying the back-metal layer.
18. The method as in claim 15 , wherein forming the semiconductor die comprises forming a stress-relief layer overlying the backside surface of the GaAs substrate, wherein the stress-relief layer is between the backside surface and the back-metal layer.
19. The method as in claim 15 , wherein reflowing the soft solder layer comprises providing sufficient heat to at least partially melt the copper back-metal layer.
20. The method as in claim 15 , wherein the GaAs substrate has a thickness of between approximately 15 microns and 50 microns and the back-metal layer has thickness of between approximately 11 microns to 15 microns.