IP Library Granted Patent US 7,233,167
Granted Patent B1
US 7,233,167 · App. 11/056,984 · Granted Jun 19, 2007

Block symmetrization in a field programmable gate array

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Quick Facts
Patent No.
US 7,233,167
App. No.
11/056,984
Granted
Jun 19, 2007
Kind
B1
Abstract

An FPGA architecture has top, middle and low levels. The top level is an array of B16×16 tiles enclosed by I/O blocks. The routing resources in the middle level are expressway routing channels including interconnect conductors. At the lowest level, there are block connect routing channels, local mesh routing channels, and direct connect interconnect conductors to connect the logic elements to further routing resources. Each B1 block includes four clusters of devices. Each of the clusters includes first and second LUT3s, a LUT2, and a DFF. Each of the LUT3s have three inputs and one output. Each of the LUT2s have two inputs and one output. Each DFF has a data input and a data output. In each of the clusters the outputs of the LUT3s are multiplexed to the input of DFF, and symmetrized with the output of the DFF to form two outputs of each of the clusters.

Claims (7)

1. A system for connecting a plurality of look-up tables and a D-type Flip flop of a logic cluster in a logic block of a field programmable gate array, wherein each of said plurality of look-up tables has a plurality of inputs and a single output and said D-type flip-flop having an input and an output, said system comprising:

a first plurality of NMOS transistors wherein a source of each of said first plurality is connected to an output of different ones of said plurality of look-up tables and said drain is connected to an input of said D-type flip-flop and a gate controlled by a first signal;

a second plurality of NMOS transistors wherein a source of each of said first plurality is connected to an output of different ones of said plurality of look-up tables and said drain is connected to an output of said D-type flip-flop and a gate controlled by a complement of said first signal controlling said gate of the one of said first plurality of NMOS transistors having a source connected to said output of different one of said plurality of look-up tables;

a third plurality of NMOS transistors wherein each of said third plurality of NMOS transistors has a source connected said drain of one of said second plurality of NMOS transistors, a gate connected to said output of said D-type output device and gates of other ones of said third plurality of transistors, and a gate controlled by said first signal controlling said one of said first plurality of NMOS transistors connected to said ones of said second plurality of transistors connected to said source;

a plurality of inverters wherein each of said inverters is connected to a drain of one of said second plurality of transistors and said source of said one of said third plurality of transistors connected to said drain of said one of second plurality of transistors;

a fourth plurality of NMOS transistors wherein each of said plurality of fourth NMOS transistors has a source connected to one of said plurality of inverters, a drain connected to one of a plurality of output nodes, and a gate controlled by a second signal; and

a fifth plurality of NMOS transistors wherein each of said plurality of fifth NMOS transistors has a source connected to one of said plurality of inverters, a drain connected to one of a plurality of output nodes wherein said one of said plurality of output nodes is connected to a drain of one of said fourth plurality of NMOS transistors connected to another one of said plurality of transistors, and a gate controlled by an inverse of said second signal controlling said one of said fourth plurality of NMOS transistors.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2011
From: WHITE ELECTRONIC DESIGNS CORP.; ACTEL CORPORATION; MICROSEMI CORPORATION
To: MORGAN STANLEY & CO. INCORPORATED
Reel/Frame 025783/0613 →