Method of forming a semiconductor device and an optical device and structure thereof
View Patent ↗An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, and a transistor on the same semiconductor. The first semiconductor protective layer protects the semiconductor substrate during formation of the second semiconductor layer, and the second semiconductor layer protects the second semiconductor material during subsequent processing of the first semiconductor. In one embodiment, the first semiconductor includes silicon and the second semiconductor material includes germanium.
1. A method comprising:
providing a substrate comprising a first semiconductor material, wherein the substrate has a first region and a second region and the first semiconductor material comprises silicon;
forming a gate dielectric over the substrate in the first region;
forming a gate electrode over the gate dielectric;
forming a first semiconductor protective layer over the first region and the second region after forming the gate electrode;
removing portions of the first semiconductor protective layer in the second region to form openings;
forming a second semiconductor material in the openings, wherein the second semiconductor comprises germanium;
forming a second semiconductor protective layer over the second semiconductor in the second region;
patterning the first semiconductor protective layer in the first region to expose an area; and
forming a contact that is coupled to the area.
2. The method of claim 1 , wherein the forming the first semiconductor protective layer is performed after forming source/drain regions of a transistor.
3. The method of claim 1 , wherein the forming the first semiconductor protective layer comprises forming the first semiconductor protective layer comprising a dielectric.
4. The method of claim 1 , wherein the second semiconductor protective layer comprises silicon and nitrogen.
5. The method of claim 1 , wherein the forming the first semiconductor protective layer comprises forming silicon dioxide.
6. The method of claim 1 , wherein the forming the second semiconductor in the openings comprises selectively depositing epitaxial germanium.
7. The method of claim 1 , further comprising saliciding the area prior to forming the contact, implanting the second semiconductor material with a dopant, annealing the second semiconductor material after the implanting, and wherein the annealing is performed after the saliciding the area.
8. The method of claim 1 , further comprising implanting the second semiconductor with a dopant, annealing the second semiconductor material after the implanting, and wherein the annealing is performed before saliciding the area.
9. The method of claim 1 , wherein the forming the first semiconductor protective layer comprises depositing the first semiconductor protective layer.
10. A method comprising:
providing a substrate comprising silicon;
forming a transistor on the substrate;
forming a silicon protective layer over the substrate after forming the transistor;
exposing portions of the substrate, wherein the exposing comprises forming windows in the silicon protective layer;
forming a material comprising germanium in the windows;
forming a germanium protective layer over the substrate;
patterning the germanium protective layer and the silicon protective layer to expose an area comprising silicon; and
saliciding the area.
11. The method of claim 10 , wherein the forming the silicon protective layer is performed after forming source/drain regions of the transistor.
12. The method of claim 10 , wherein the forming the silicon protective layer comprises forming the silicon protective layer comprising a dielectric.
13. The method of claim 12 , wherein the forming the silicon protective layer comprises forming silicon dioxide.
14. The method of claim 10 , wherein the forming the material comprising germanium in the windows comprises selectively depositing epitaxial germanium.
15. The method of claim 10 , further comprising implanting the material comprising germanium with a dopant, annealing the material after the implanting, and wherein the annealing is performed after the saliciding the area.
16. The method of claim 10 , further comprising implanting the material comprising germanium with a dopant, annealing the material after the implanting, and wherein the annealing is performed before the saliciding the area.
17. The method of claim 10 wherein the germanium protective layer comprises silicon and nitrogen.
18. The method of claim 10 wherein the substrate is a silicon-on-insulator (SOI) substrate.