Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
View Patent ↗Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.
1. Abrasive grains, comprising grains with a roundness of 0.50 or more and 0.75 or less, wherein the roundness is defined as a ratio of a circumference of a circle having the same area as that of a projected image of a grain to a perimeter of the projected image of the grain, wherein the roundness is determined after a medium containing the grains has been agitated to disperse the grains while being irradiated with ultrasound.
2. The abrasive grains according to claim 1 , wherein:
the roundness is 0.55 or more and 0.72 or less.
3. The abrasive grains according to claim 1 , wherein:
the grains comprise a plurality of aggregated primary grains, wherein an average grain size of each primary grain is 0.005 μm or more and 0.1 μm or less.
4. The abrasive grains according to claim 3 , wherein:
an average grain size of the aggregated primary grains is 1 μm or more and 30 μm or less.
5. The abrasive grains according to claim 3 , wherein:
an average grain size of the aggregated primary grains is 3 μm or more and 20 μm or less.
6. The abrasive grains according to claim 1 , wherein the grains comprise fumed silica.
7. An abrasive, comprising:
abrasive grains that comprise grains with a roundness of 0.50 or more and 0.75 or less, wherein the roundness is defined as the ratio of the circumference of a circle having the same area as that of a projected image of a grain to a perimeter of the projected image of the grain, wherein the roundness is determined after a medium containing the grains has been agitated to disperse the grains while being irradiated with ultrasound; and
at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound.
8. The abrasive according to claim 7 , wherein:
the oxidizer is sodium dichloroisocyanurate, the oxide solution is sodium tripolyphosphate; the abrasive grain dispersion agent is sodium sulfate; and the basic compound is sodium carbonate or sodium hydroxide.
9. The abrasive according to claim 7 , wherein the grains comprise fumed silica.
10. An abrasive solution, comprising:
abrasive grains that comprise grains with a roundness of 0.50 or more and 0.75 or less, wherein the roundness is defined as a ratio of a circumference of a circle having the same area as that of a projected image of a grain to a perimeter of the projected image of the grain, wherein the roundness is determined after a medium containing the grains has been agitated to disperse the grains while being irradiated with ultrasound; and
water or hydrophilic substance, wherein the water or hydrophilic substance is the medium containing the grains being agitated to disperse the grains while being irradiated with ultrasound.
11. The abrasive solution according to claim 10 , wherein:
the abrasive grain content is 10 wt % or more and 40 wt % or less when the total amount of the solid content in the abrasive solution is 100 wt %.
12. The abrasive solution according to claim 10 , wherein:
the abrasive grain content is 0.5 wt % or more and 5 wt % or less when the total amount of the abrasive solution is 100 wt %.
13. The abrasive solution according to claim 10 , further comprising at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound.
14. The abrasive solution according to claim 13 , wherein:
the oxidizer is sodium dichloroisocyanurate; the oxide solution is sodium tripolyphosphate; the abrasive grain dispersion agent is sodium sulfate; and the basic compound is sodium carbonate or sodium hydroxide.
15. The abrasive solution according to claim 10 , wherein:
the abrasive solution is used for grinding group III-V compound semiconductor material or semiconductor material.
16. The abrasive solution according to claim 10 , wherein the grains comprise fumed silica.
17. A method for preparing an abrasive solution, comprising the steps of:
adding an abrasive to a medium, wherein the abrasive comprises: abrasive grains that comprise grains; and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound;
agitating the medium while irradiating it with ultrasound; and
determining the roundness of the grains after agitating the medium while irradiating it with ultrasound,
wherein the grains have a roundness of 0.50 or more and 0.75 or less, wherein the roundness is defined as a ratio of a circumference of a circle having the same area as that of a projected image of a grain to a perimeter of the projected image of the grain.